AOSMD AON5820

AON5820
20V Common-Drain Dual N-Channel MOSFET
General Description
Product Summary
The AON5820 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V while retaining a 12V
VGS(MAX) rating It is ESD protected. This device is suitable
for use as a uni-directional or bi-directional load switch,
facilitated by its common-drain configuration.
VDS
ID (at VGS=4.5V)
20V
10A
RDS(ON) (at VGS=4.5V)
< 9.5mΩ
RDS(ON) (at VGS=4.0V)
< 10mΩ
RDS(ON) (at VGS=3.5V)
< 10.5mΩ
RDS(ON) (at VGS=3.1V)
< 11.5mΩ
RDS(ON) (at VGS=2.5V)
< 13mΩ
Typical ESD protection
HBM Class 2
DFN 2X5
S2
S2
G2
D1/D2
G1
G2
S1
S1
G1
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
TA=25°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 0: Oct. 2011
Steady-State
Steady-State
±12
V
A
1.7
RθJA
RθJC
W
1
TJ, TSTG
Symbol
t ≤ 10s
Units
V
85
PDSM
Junction and Storage Temperature Range
Maximum
20
8
IDM
TA=70°C
S2
10
ID
TA=70°C
Pulsed Drain Current C
Power Dissipation A
D2
D1
Bottom View
Top View
-55 to 150
Typ
30
61
4.5
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°C
Max
40
75
5.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON5820
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±10V
Gate Threshold Voltage
VDS=VGS, ID=250µA
ID(ON)
On state drain current
85
7.4
9.5
8
11
14
VGS=4.0V, ID=10A
5.8
7.6
10
mΩ
VGS=3.5V, ID=9A
6
8
10.5
mΩ
VGS=3.1V, ID=9A
6.3
8.3
11.5
mΩ
VGS=2.5V, ID=8A
6.8
9.2
13
mΩ
1
V
2.5
A
Forward Transconductance
VDS=5V, ID=10A
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
V
5.5
VSD
Output Capacitance
µA
1.0
VGS=4.5V, VDS=5V
gFS
Coss
10
0.65
VGS=4.5V, ID=10A
TJ=125°C
Static Drain-Source On-Resistance
µA
5
0.3
Units
V
1
TJ=55°C
VGS(th)
Max
20
VDS=20V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=0V, VDS=10V, f=1MHz
65
0.58
mΩ
S
1000
1255
1510
pF
150
220
290
pF
100
168
235
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
A
2.5
10
VGS=4.5V, VDS=10V, ID=10A
12.5
pF
KΩ
15
nC
Qgs
Gate Source Charge
5.5
nC
Qgd
Gate Drain Charge
6.5
nC
tD(on)
Turn-On DelayTime
1.1
µs
tr
Turn-On Rise Time
2.6
µs
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=10A, dI/dt=500A/µs
8.5
11
13.5
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
12
15
18
VGS=4.5V, VDS=10V, RL=1Ω,
RGEN=3Ω
7
µs
7.4
µs
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Oct. 2011
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Page 2 of 6
AON5820
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
40
4.5V
35
3V
60
30
25
2V
ID(A)
ID (A)
VDS=5V
2.5V
40
20
15
10
20
125°C
VGS=1.5V
5
25°C
0
0
0
1
2
3
4
0
5
12
1
1.5
2
VGS=2.5V
VGS=3.1V
8
6
VGS=4.5V
VGS=4.0V
VGS=3.5V
Normalized On-Resistance
1.8
10
RDS(ON) (mΩ
Ω)
0.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=3.5V
ID=9A
1.6
VGS=3.1V
ID=9A
1.4
17
5
VGS=2.5V
ID=8A
VGS=4.0V
ID=10A 2
1.2
10
VGS=4.5V
ID=10A
1
0.8
4
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
25
1.0E+02
ID=10A
1.0E+01
20
40
15
125°C
10
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
5
25°C
1.0E-04
1.0E-05
0
0
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Oct. 2011
2
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON5820
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2000
VDS=10V
ID=10A
8
1600
Capacitance (pF)
VGS (Volts)
Ciss
6
4
1200
800
Coss
2
400
0
0
Crss
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
0
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
200
1000.0
10µs
100.0
160
100µs
1.0
1ms
10ms
DC
Power (W)
10.0
TJ(Max)=150°C
TC=25°C
0.1
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
ID (Amps)
5
17
5
2
10
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18Junction-to-Case
Figure 10: Single Pulse Power Rating
(Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=5.5°C/W
40
1
0.1
PD
Ton
Single Pulse
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Oct. 2011
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Page 4 of 6
AON5820
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
25
Current rating ID(A)
Power Dissipation (W)
30
20
15
10
10
5
5
0
0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Power De-rating (Note F)
150
0
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note F)
150
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
1000
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Oct. 2011
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Page 5 of 6
AON5820
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R esis tive S w itching Te st C irc uit & W av eform s
RL
V ds
V ds
DUT
V gs
+
VD C
90 %
Vdd
-
Rg
1 0%
V gs
Vgs
t d(on )
tr
t d (o ff)
t on
tf
t off
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 0: Oct. 2011
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6