AON2801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AON2801/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AON2801 and AON2801L are electrically identical. -RoHS Compliant -Halogen Free* VDS (V) = -20V ID = -3A (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -4.5V) RDS(ON) < 160mΩ (VGS = -2.5V) RDS(ON) < 200mΩ (VGS = -1.8V) DFN 2x2 Package S1 G1 D2 G2 G1 D1 Top G2 S2 S1 S2 Bottom Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain CurrentA C TA=25°C A Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Units V ±8 V ID -2.3 IDM -15 W 0.95 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State t ≤ 10s Steady-State A 1.5 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient B Maximum Junction-to-Ambient B Maximum -20 -3 TA=70°C Pulsed Drain Current Power Dissipation D2 D1 RθJA RθJA Typ 35 65 120 175 °C Max 45 85 155 235 Units °C/W °C/W °C/W °C/W www.aosmd.com AON2801 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -15 TJ=55°C VGS=-4.5V, ID=-3A VGS=-1.8V, ID=-1.5A 160 200 mΩ IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance tD(on) Turn-On DelayTime tr Turn-On Rise Time 6 VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, RL=1.5Ω, RGEN=3Ω A 700 pF pF 63 pF 9.5 Ω 6.5 nC 1.2 nC 1 nC 5 ns 40 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-3A, dI/dt=100A/µs 21 Qrr Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs 9.1 Body Diode Reverse Recovery Time V -1 90 5 VGS=-4.5V, VDS=-10V, ID=-3A mΩ S -0.76 540 VGS=0V, VDS=-10V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Gate Drain Charge A mΩ Diode Forward Voltage Gate Source Charge V 160 VSD Qgs -1 128 IS Qgd nA VGS=-2.5V, ID=-2.6A VDS=-5V, ID=-3A Gate resistance ±100 120 Forward Transconductance Rg -0.55 µA 170 gFS Reverse Transfer Capacitance -5 100 Static Drain-Source On-Resistance Output Capacitance Units 135 TJ=125°C RDS(ON) Coss Max V VDS=-20V, VGS=0V IDSS Crss Typ 28.5 ns 46 ns 28 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The -15value in any given application depends Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to. B. The value of R θJA is measured with the device mounted on a minimum pad board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to. C. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 7111 (Oct 15 2007). Rev 2: Sep 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON2801 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 15 -3.0V -4.5V VDS=-5V 12 12 -2.5V -ID(A) -ID (A) 25°C 9 -2.0V 6 9 125°C 6 VGS=-1.5V 3 3 0 0 0 1 2 3 4 0 1 -VDS (Volts) Figure 1: On-Region Characteristics 3 4 1.5 Normalized On-Resistance 280 240 RDS(ON) (mΩ ) 2 -VGS(Volts) Figure 2: Transfer Characteristics VGS=-1.8V 200 VGS=-2.5V 160 120 VGS=-4.5V 80 VGS=-1.8V ID=-1.5A VGS=-2.5V ID=-2.6A 1.3 VGS=-4.5V ID=-3A 1.1 0.9 0.7 0 2 4 6 8 10 -50 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -15 -25 0 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1E+01 320 ID=-3A 280 1E+00 240 1E-01 -IS (A) RDS(ON) (mΩ ) 12 200 125°C 160 120 125°C 1E-02 25°C 1E-03 1E-04 25°C 80 1E-05 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AON2801 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 800 VDS=-10V ID=-3A 700 3 2 Ciss 600 Capacitance (pF) -VGS (Volts) 4 500 400 300 Crss Coss 200 1 100 0 0 0 1 2 3 4 5 6 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 10000 100.00 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 10µs 10.00 1000 100µ 1.00 Power (W) -ID (Amps) 20 1ms RDS(ON) limited 0.10 10ms 0.1s 10s DC 100 10 0.01 0.1 1 10 100 1 0.000001 -VDS (Volts) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=85°C/W 0.0001 0.01 1 100 10000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-15 Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 12 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON2801 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC Qgd + + DUT Qgs Vds VDC Vgs Ig Charge Resistive Switching Test Circuit & W aveform s RL Vds t off t on td(on) Vgs - D UT Vgs t d(off) tr 90% Vdd VDC tf + Rg Vgs 10% Vds Diode Recovery Test Circuit & W aveform s Q rr = - Idt Vds + D UT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd t rr dI/dt -I R M Vdd VD C - -I F -Vds www.aosmd.com