AOSMD AON3419

AOS Semiconductor
Product Reliability Report
AON3419,
rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
This AOS product reliability report summarizes the qualification result for AON3419.
Accelerated environmental tests are performed on a specific sample size, and then followed
by electrical test at end point. Review of final electrical test result confirms that AON3419
passes AOS quality and reliability requirements.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
I. Product Description:
The AON3419 combines advanced trench MOSFET technology with a low resistance
package to provide extremely low RDS(ON). This device is ideal for load switch and battery
protection applications.
-RoHS Compliant
-Halogen-Free
Detailed information refers to datasheet.
II. Die / Package Information:
AON3419
Standard sub-micron
30V P channel MOSFET
Package Type
DFN 3x3
Lead Frame
Bare Cu
Die Attach
Ag Epoxy
Bonding
Cu wire
Mold Material
Epoxy resin with silica filler
MSL (moisture sensitive level) Level 1 based on J-STD-020
Process
Note * based on information provided by assembler and mold compound supplier
III. Result of Reliability Stress for AON3419
Test Item
Test Condition
Time
Point
Lot
Attribution
Total
Sample
size
Number
of
Failures
MSL
Precondition
168hr 85°c
/85%RH +3 cycle
reflow@260°c
HTGB
-
12 lots
2310pcs
0
JESD22A113
Temp = 150 c,
Vgs=100% of
Vgsmax
168hrs
500 hrs
1000 hrs
693pcs
0
4 lots
5 lots
JESD22A108
Temp = 150 c,
Vds=80% of
Vdsmax
168hrs
500 hrs
1000 hrs
77pcs / lot
693pcs
0
4 lots
5 lots
JESD22A108
HAST
130 c, 85%RH,
33.3 psi, Vds =
80% of Vds max
96 hrs
9 lots
77pcs / lot
693pcs
0
JESD22A110
Pressure Pot
121c, 29.7psi,
RH=100%
96 hrs
(Note A*)
9 lots
77 pcs / lot
693pcs
0
JESD22A102
Temperature
Cycle
-65c to 150c,
air to air
250 / 500
cycles
(Note A*)
12 lots
77 pcs / lot
924pcs
0
JESD22A104
(Note A*)
77 pcs / lot
HTRB
Standard
Note A: The reliability data presents total of available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion): 3.27
MTTF = 34906 years
The presentation of FIT rate for the individual product reliability is restricted by the actual
burn-in sample size of the selected product (AON3419). Failure Rate Determination is based
on JEDEC Standard JESD 85. FIT means one failure per billion hours.
2
9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)]
9
= 1.83 x 10 / [2x (8x77x500 +10x77x1000) x259] = 3.27
9
8
MTTF = 10 / FIT = 3.06 x 10 hrs = 34906 years
Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
Af
259
87
32
13
5.64
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u = The use junction temperature in degree (Kelvin), K = C+273.16
-5
K = Boltzmann’s constant, 8.617164 X 10 eV / K
130 deg C
150 deg C
2.59
1