AOSMD AON4421

AON4421
P-Channel Enhancement Mode
Field Effect Transistor
General Description
Product Summary
The AON4421 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a load switch.
ID (at VGS=-10V)
-8A
RDS(ON) (at VGS=-10V)
< 26mΩ
RDS(ON) (at VGS=-4.5V)
< 34mΩ
-30V
VDS
ESD Protected
-RoHS Compliant
-Halogen Free
D
DFN 3x2
Top View
Bottom View
Pin 1
D
D
D
D
D
D
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current
Pulsed Drain Current C
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 0: February 2009
Steady-State
Steady-State
A
2.5
W
1.6
TJ, TSTG
Symbol
t ≤ 10s
V
-60
PD
TA=70°C
±20
-6
IDM
TA=25°C
B
Units
V
-8
ID
TA=70°C
Maximum
-30
RθJA
RθJL
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°C
-55 to 150
Typ
42
74
25
Max
50
90
30
Units
°C/W
°C/W
°C/W
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AON4421
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
VDS=-30V, VGS=0V
-30
-5
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
ID(ON)
Gate Threshold Voltage
On state drain current
VDS=VGS ID=-250µA
-0.8
VGS=-10V, VDS=-5V
-60
VGS=-10V, ID=-8A
TJ=125°C
VGS=-4.5V, ID=-7A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
IS
VDS=-5V, ID=-8A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(-10V) Total Gate Charge
Qg(-4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-8A
VGS=-10V, VDS=-15V, RL=1.9Ω,
RGEN=3Ω
µA
±10
µA
-1.3
-1.8
V
21
26
28
34
27
34
mΩ
-1
V
-3
A
1120
pF
A
22
-0.74
930
VGS=0V, VDS=-15V, f=1MHz
Units
V
TJ=55°C
Static Drain-Source On-Resistance
Max
-1
IGSS
RDS(ON)
Typ
mΩ
S
170
pF
120
pF
8
Ω
17.6
21
nC
8.6
10
nC
2
nC
3.4
nC
6
ns
7
ns
40
ns
30
trr
Body Diode Reverse Recovery Time
IF=-8A, dI/dt=500A/µs
18
Qrr
Body Diode Reverse Recovery Charge IF=-8A, dI/dt=500A/µs
32
ns
22
ns
nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: February 2009
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Page 2 of 5
AON4421
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
60
-6V
-10V
-4.5V
-4V
20
-ID(A)
-ID (A)
40
-3.5V
30
20
VDS=-5V
25
50
15
10
-3V
5
10
25°C
125°C
VGS=-2.5V
0
0
0
1
2
3
4
0.5
5
35
1.5
2
2.5
3
3.5
4
Normalized On-Resistance
1.5
VGS=-4.5V
30
RDS(ON) (mΩ)
1
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
25
20
VGS=-10V
15
VGS=-10V
ID=-8A
1.4
1.3
17
1.2
VGS=-4.5V5
ID=-7A 2
1.1
10
1.0
0.9
10
0
4
8
12
16
0
20
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
70
ID=-8A
1.0E+01
60
-IS (A)
RDS(ON) (mΩ)
40
1.0E+00
50
40
125°C
30
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
20
1.0E-04
25°C
1.0E-05
10
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: February 2009
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON4421
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1400
VDS=-15V
ID=-8A
1200
Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
1000
800
600
400
Coss
2
200
0
Crss
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
10000
100.0
TA=25°C
10µs
1000
1ms
RDS(ON)
limited
Power (W)
-ID (Amps)
10.0
10ms
1.0
100ms
0.1
0.1
100
10
10s
DC
TJ(Max)=150°C
TA=25°C
0.0
0.01
1
-VDS (Volts)
10
1
0.00001
100
ZθJA Normalized Transient
Thermal Resistance
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
30
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01
0.001
0.00001
Single Pulse
0.0001
0.001
0.01
Ton
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: February 2009
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Page 4 of 5
AON4421
Gate Charge Test Circuit & W aveform
Vgs
Qg
-10V
+
VDC
-
Qgs
Vds
Qgd
+
VDC
DUT
Vgs
Ig
Charge
R esistive S w itching T est C ircuit & W avefo rm s
RL
V ds
t off
t on
V gs
VDC
-
DUT
V gs
Rg
td(on)
t d(o ff)
tr
tf
90%
V dd
+
V gs
10%
V ds
D io de R ec overy T est C ircuit & W aveform s
Q rr = -
V ds +
DUT
Vds -
Isd
V gs
Ig
Rev 0: February 2009
Idt
Vg s
L
-Isd
+
VD C
-
-I F
t rr
d I/d t
-I R M
V dd
V dd
-V d s
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Page 5 of 5