AO4498E 30V N-Channel MOSFET General Description Product Summary The AO4498E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=10V) VDS 30V 18A RDS(ON) (at VGS=10V) < 5.8mΩ RDS(ON) (at VGS = 4.5V) < 8.5mΩ ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 1: November 2009 Steady-State Steady-State A 3.1 W 2 TJ, TSTG Symbol t ≤ 10s V 120 PD TA=70°C ±20 14 IDM TA=25°C Power Dissipation B Units V 18 ID TA=70°C Maximum 30 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AO4498E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions ID=250µA, VGS=0V Min Typ 30 36 VDS=30V, VGS=0V TJ=55°C Units V 1 µA 5 ±10 µA 1.8 2.3 V 4.8 5.8 7.4 8.9 VGS=4.5V, ID=16A 6.8 8.5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 120 VGS=10V, ID=18A RDS(ON) Max Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=18A 50 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss mΩ mΩ S 1 V 4 A 1840 2300 2760 pF 230 330 430 pF 145 240 340 pF 0.6 1.25 1.9 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 34 42 50 nC Qg(4.5V) Total Gate Charge 16 20 24 nC 5.6 7 8.4 nC 6 10 14 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=18A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=18A, dI/dt=500A/µs 10 12.5 15 Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs 22 27 32 VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω 8 ns 10 ns 33 ns 8 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: November 2010 www.aosmd.com Page 2 of 5 AO4498E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 120 6V 10V 100 VDS=5V 4.5V 80 80 4V ID(A) ID (A) 60 60 40 3.5V 40 20 20 25°C 125°C VGS=3V 0 0 0 1 2 3 4 5 0 1 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 12 Normalized On-Resistance 1.8 10 RDS(ON) (mΩ ) 2 VGS=4.5V 8 6 4 VGS=10V 2 0 VGS=10V ID=18A 1.6 1.4 17 5 VGS=4.5V ID=16A 2 1.2 10 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 20 ID=18A 1.0E+01 40 15 10 IS (A) RDS(ON) (mΩ ) 1.0E+00 125°C 1.0E-01 1.0E-02 5 125°C 25°C 1.0E-03 25°C 1.0E-04 0 2 4 6 8 10 1.0E-05 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: November 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO4498E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3500 10 VDS=15V ID=18A 3000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 2500 2000 1500 1000 Coss 2 500 0 5 10 15 20 25 30 35 40 Qg (nC) Figure 7: Gate-Charge Characteristics 0 45 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 TA=25°C 100.0 10µs RDS(ON) limited 1000 100µs 1.0 1ms 0.1 10s Power (W) 10.0 5 10000 1000.0 ID (Amps) Crss 0 0 10ms TJ(Max)=150°C TA=25°C 100 10 DC 0.0 0.01 0.1 1 VDS (Volts) 10 100 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD Single Pulse 0.01 Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: November 2010 www.aosmd.com Page 4 of 5 AO4498E Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 1: November 2010 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5