AOSMD AON4703

AON4703
20V P-Channel MOSFET with Schottky Diode
General Description
Features
The AON4703 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for buck converter applications.
VDS (V) = -20V
ID = -3.4A (VGS = -4.5V)
RDS(ON) < 90mΩ (VGS = -4.5V)
RDS(ON) < 120mΩ (VGS = -2.5V)
RDS(ON) < 160mΩ (VGS = -1.8V)
SCHOTTKY
VKA (V) = 20V, IF = 1A, VF<0.5V @ 1A
DFN 3x2
Top View
Bottom
Pin 1
A
A
S
G
1
2
3
4
8
7
6
5
D
K
S
A
K
K
D
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain Current A
Pulsed Drain Current
TA=70°C
B
IDM
TA=25°C
Continuous Forward Current A
TA=70°C
B
Power Dissipation
TA=70°C
TJ, TSTG
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Thermal Characteristics Schottky
t ≤ 10s
Maximum Junction-to-Ambient A
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead C
Rev 2: June 2010
V
V
-2.7
A
-15
IF
PD
Symbol
RθJA
RθJL
RθJA
RθJL
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Units
±8
-3.4
IFM
TA=25°C
Schottky
-20
VKA
Schottky reverse voltage
Pulsed Forward Current
ID
MOSFET
20
1.9
V
1.2
A
1.7
7
0.96
1.1
0.62
-55 to 150
-55 to 150
°C
Typ
51
88
28
Max
75
110
35
Units
66
95
40
80
130
50
W
°C/W
°C/W
Page 1 of 6
AON4703
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-20
Gate-Body leakage current
VDS=0V, VGS=±8V
VDS=VGS ID=-250µA
-0.4
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-15
±100
VGS=-4.5V, ID=-3.4A
90
VGS=-2.5V, ID=-2.5A
65
120
mΩ
VGS=-1.8V, ID=-1.5A
83
160
mΩ
VDS=-5V, ID=-3.4A
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Reverse Transfer Capacitance
Gate resistance
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
S
-1
V
-2
A
745
pF
80
pF
70
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-10V, ID=-3.4A
VGS=-4.5V, VDS=-10V, RL=2.9Ω,
RGEN=3Ω
IF=-3.4A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=-3.4A, dI/dt=100A/µs
SCHOTTKY PARAMETERS
VF
Forward Voltage Drop
IF=1A
pF
15
23
Ω
8.5
11
nC
1.2
nC
2.1
nC
7.2
ns
36
ns
53
ns
56
ns
37
49
ns
nC
0.5
V
27
0.4
VR=16V
VR=16V, TJ=125°C
0.2
Irm
Maximum reverse leakage current
CT
Junction Capacitance
VR=10V
44
Schottky Reverse Recovery Time
Schottky Reverse Recovery Charge
IF=1A, dI/dt=100A/µs
IF=1A, dI/dt=100A/µs
11
2.5
trr
Qrr
mΩ
12
-0.7
560
VGS=0V, VDS=-10V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
V
A
135
Forward Transconductance
Rg
nA
-1
51
VSD
Crss
-0.65
64
TJ=125°C
gFS
Output Capacitance
µA
-5
Gate Threshold Voltage
Coss
Units
-1
TJ=55°C
IGSS
Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
VGS(th)
RDS(ON)
Typ
20
mA
pF
14
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: June 2010
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Page 2 of 6
AON4703
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
25
-3.0V
-4.5V
16
12
15
-2.0V
-ID(A)
-ID (A)
VDS=-5V
-2.5V
20
8
10
125°C
VGS=-1.5V
4
5
165
25°C
0
0
0
1
2
3
4
-VDS (Volts)
Fig 1: On-Region Characteristics
5
0
90
1
1.5
2
2.5
-VGS(Volts)
Figure 2: Transfer Characteristics
3
Normalized On-Resistance
1.4
80
VGS=-2.5V
RDS(ON) (mΩ
Ω)
0.5
70
60
VGS=-4.5V
50
40
VGS=-2.5V
ID=-2.5A
1.3
VGS=-1.8V
ID=-1.5A
1.2
VGS=-4.5V
ID=-3.4A
1.1
1
0.9
0
2
4
6
8
10
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
180
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+02
ID=-3.4A
1E+01
140
1E+00
-IS (A)
RDS(ON) (mΩ
Ω)
125°
1E-01
100
125°
25°C
1E-02
1E-03
60
1E-04
25°
1E-05
20
0
2
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev 2: June 2010
4
1E-06
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0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 6
1.2
AON4703
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
VDS=-10V
ID=-3.4A
1200
Capacitance (pF)
-VGS (Volts)
4
3
2
1000
800
Ciss
600
400
Crss
1
Coss
200
0
165
0
0
2
4
6
8
10
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
100.0
20
20
TJ(Max)=150°C
TA=25°C
100µs
15
10.0
RDS(ON)
limited
1ms
0.1s
1.0
Power (W)
10µs
-ID (Amps)
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
10ms
1s
10
5
TJ(Max)=150°C
TA=25°C
DC
0
0.1
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
Rev 2: June 2010
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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100
1000
Page 4 of 6
AON4703
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
100
1.0E+01
125°
f = 1MHz
80
Capacitance (pF)
IF (Amps)
1.0E+00
1.0E-01
1.0E-02
60
40
20
25°
1.0E-03
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
VF (Volts)
Figure 12: Schottky Forward Characteristics
0.5
10
15
20
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
Leakage Current (A)
1.0E-02
0.4
VF (Volts)
5
IF=0.5A
0.3
0.2
0.1
1.0E-03
VR=16V
1.0E-04
1.0E-05
1.0E-06
0
25
50
75
100
Temperature (°C)
125
150
0
25
50
75
100
125
150
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=130°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
Rev 2: June 2010
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Schottky Normalized Maximum Transient Thermal Impedance
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100
1000
Page 5 of 6
AON4703
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
+
DUT
Qgs
Vds
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
td(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 2: June 2010
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 6 of 6