AON6442 40V N-Channel MOSFET General Description Product Summary The AON6442 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. VDS 40V 32A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 4.8mΩ RDS(ON) (at VGS = 4.5V) < 7mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current C V A 168 22 IDSM TA=70°C ±20 42 IDM TA=25°C Continuous Drain Current Units V 65 ID TC=100°C Maximum 40 A 18 Avalanche Current C IAS, IAR 40 A Avalanche energy L=0.1mH C EAS, EAR 80 mJ TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0 : Dec 2009 4.2 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2.7 TJ, TSTG Symbol t ≤ 10s W 14 PDSM TA=70°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case 35.7 PD -55 to 150 Typ 25 55 2.6 °C Max 30 65 3.5 Units °C/W °C/W °C/W Page 1 of 6 AON6442 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=40V, VGS=0V 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.4 VGS=10V, VDS=5V 168 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=15A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous CurrentG IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 40 VGS(th) ID(ON) RDS(ON) Typ µA 100 nA 1.9 2.4 V 4 4.8 6.2 7.5 5.5 7 mΩ 1 V 32 A A 67 0.7 mΩ S 1460 1830 2200 pF 365 521 680 pF 20 43 73 pF 0.4 0.8 1.2 Ω 22 27.8 35 nC 10 12.8 15 nC 3 3.9 5 nC 2 6 10 nC VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 7.2 ns 3 ns 23 ns 3.5 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 11 16.5 21 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 28 40 52 ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Dec. 2009 www.aosmd.com Page 2 of 6 AON6442 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 10V VDS=5V 3.5V 6V 80 60 60 ID(A) ID (A) 7V 40 40 3V 20 20 125°C 25°C VGS=2.5V 0 0 0 1 2 3 4 1 5 1.5 10 2.5 3 3.5 4 Normalized On-Resistance 2 8 RDS(ON) (mΩ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 6 4 VGS=10V 2 1.8 VGS=10V ID=20A 1.6 17 5 2 VGS=4.5V10 1.4 1.2 ID=15A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 15 1.0E+02 ID=20A 1.0E+01 12 40 125°C 9 IS (A) RDS(ON) (mΩ) 1.0E+00 6 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 3 1.0E-04 25°C 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Dec 2009 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6442 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=20V ID=20A 2500 Capacitance (pF) VGS (Volts) 8 6 4 2 1500 Crss 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 0 30 10µs 10 15 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 100µs 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 0.1 160 10µs RDS(ON) limited Power (W) 100.0 10.0 5 40 200 1000.0 10 1 TJ(Max)=150°C TC=25°C 17 5 2 10 120 80 40 1 VDS (Volts) 10 100 0 0.0001 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.001 0.01 1 0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=3.5°C/W PD 0.1 Ton 0.01 0.00001 0.1 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance Coss 1000 500 0 ID (Amps) Ciss 2000 Single Pulse 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Dec 2009 www.aosmd.com Page 4 of 6 AON6442 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 TA=25°C TA=100°C 100 TA=125°C TA=150°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 10 30 20 10 0 1 10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 70 150 TA=25°C 1000 60 Power (W) Current rating ID(A) 125 10000 80 50 40 30 17 5 2 10 100 10 20 10 1 0.00001 0 0 25 50 75 100 125 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 0.1 10 1000 0 18 150 TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 100 TCASE (°C) Figure 13: Power De-rating (Note F) Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=65°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Dec 2009 www.aosmd.com Page 5 of 6 AON6442 Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0: Dec 2009 Vgs Isd L + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 6 of 6