AON6520 30V N-Channel MOSFET General Description Product Summary The AON6520 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. ID (at VGS=10V) VDS 30V 50A RDS(ON) (at VGS=10V) < 8.5mΩ RDS(ON) (at VGS=4.5V) < 11mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.05mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 0: Aug 2011 IAS, IAR 35 A EAS, EAR 31 mJ 31 Steady-State Steady-State W 12.5 1.9 RθJA RθJC www.aosmd.com W 1.2 TJ, TSTG Symbol t ≤ 10s A 9 PDSM TA=70°C A 11 PD TC=100°C V 140 IDSM TA=70°C ±20 29 IDM TA=25°C Continuous Drain Current Units V 50 ID TC=100°C Maximum 30 -55 to 150 Typ 24 53 3.4 °C Max 30 64 4 Units °C/W °C/W °C/W Page 1 of 6 AON6520 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±20V VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 140 100 nA 1.95 2.5 V 7 8.5 10 12 VGS=4.5V, ID=20A 8.5 11 mΩ 55 1 V 35 A VGS=10V, ID=20A Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 Gate Threshold Voltage Units V 1 IGSS Coss Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ A 0.72 mΩ S 920 1150 1380 pF VGS=0V, VDS=15V, f=1MHz 125 180 235 pF 60 105 150 pF VGS=0V, VDS=0V, f=1MHz 0.55 1.1 1.65 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 16 20 24 nC Qg(4.5V) Total Gate Charge 7.6 9.5 11.4 nC 2 2.7 3.2 nC 3 5 7 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=15V, ID=20A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 7 8.7 10.5 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 11 13.5 16 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 6.5 ns 2 ns 17 ns 3.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Aug 2011 www.aosmd.com Page 2 of 6 AON6520 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 10V 100 6V VDS=5V 120 5V 7V 80 100 60 ID(A) ID (A) 4.5V 80 4V 60 40 40 3.5V 20 125°C 20 VGS=3V 0 0 1 2 3 4 0 5 0.5 1 1.5 2 2.5 3 3.5 12 4.5 5 5.5 Normalized On-Resistance 1.8 10 VGS=4.5V 8 6 VGS=10V 4 2 VGS=10V ID=20A 1.6 1.4 17 5 VGS=4.5V ID=20A 2 1.2 10 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=20A 1.0E+01 20 40 1.0E+00 15 125°C IS (A) 125°C RDS(ON) (mΩ Ω) 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) RDS(ON) (mΩ Ω) 25°C 25°C 1.0E-01 1.0E-02 10 1.0E-03 1.0E-04 5 25°C 1.0E-05 0 0.0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Aug 2011 0.2 0.4 0.6 0.8 1.0 1.2 4 www.aosmd.com VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6520 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=15V ID=20A 8 1400 Ciss Capacitance (pF) VGS (Volts) 1200 6 4 1000 800 600 400 2 Coss 200 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 0 20 10µs RDS(ON) limited 10.0 100µs 1ms DC 1.0 0.1 10ms TJ(Max)=150°C TC=25°C 30 TJ(Max)=150°C TC=25°C 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.01 0.1 1 10 0 Pulse Width (s) 18Junction-toFigure 10: Single Pulse Power Rating Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 Zθ JC Normalized Transient Thermal Resistance 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 160 10µs Power (W) 100.0 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 5 200 1000.0 ID (Amps) Crss 0 0 40 RθJC=4°C/W 0.1 PD Single Pulse 0.01 Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Aug 2011 www.aosmd.com Page 4 of 6 AON6520 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 TA=25°C 60 30 50 Power Dissipation (W) IAR (A) Peak Avalanche Current 70 TA=150°C 40 TA=100°C 30 20 TA=125°C 10 25 20 15 10 5 0 0 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 TCASE (° °C) Figure 13: Power De-rating (Note F) 10000 60 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 150 30 17 5 2 10 100 20 10 10 1 0 0 25 50 75 100 125 TCASE (° °C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.00001 150 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=64°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Aug 2011 www.aosmd.com Page 5 of 6 AON6520 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: Aug 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6