AON6716 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AON6716 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS 30V ID (at VGS=10V) 85A RDS(ON) (at VGS=10V) < 2.8mΩ RDS(ON) (at VGS = 4.5V) < 4.2mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G PIN1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C V A 310 23 IDSM TA=70°C ±20 67 IDM TA=25°C Continuous Drain Current Units V 85 ID TC=100°C Maximum 30 A 18 Avalanche Current C IAR 59 A Repetitive avalanche energy L=0.1mH C TC=25°C EAR 174 mJ Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 1: November 2010 2.3 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD -55 to 150 Typ 14 40 1 °C Max 17 55 1.5 Units °C/W °C/W °C/W Page 1 of 7 AON6716 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Typ Max 30 V VDS=30V, VGS=0V 0.1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 310 TJ=125°C 20 100 VGS=10V, ID=20A 1.7 2.2 2.3 2.8 3.4 4.1 VGS=4.5V, ID=20A 3.3 4.2 VDS=5V, ID=20A 120 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.45 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance mA nA V A RDS(ON) TJ=125°C Units mΩ mΩ S 0.7 V 85 A 3300 4100 4900 pF 560 800 1050 pF 240 400 560 pF 0.2 0.4 0.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 58 72 86 nC Qg(4.5V) Total Gate Charge 29 36 43 nC 14 17 20 nC 12 17 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 7 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 11 ns 5.5 ns 40 ns 10 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 12 15 18 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 25 31 37 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: November 2010 www.aosmd.com Page 2 of 7 AON6716 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 150 4V VDS=5V 4.5V 120 120 5V 10V 3.5V 90 ID(A) ID (A) 90 60 60 125°C 30 30 VGS=3V 25°C 0 0 0 1 2 3 4 5 0 1 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4 5 6 Normalized On-Resistance 1.8 5 RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 6 4 VGS=4.5V 3 2 VGS=10V 1 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 17 5 2 10 0.8 0 0 5 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 10 8 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=20A 7 40 1.0E+01 6 125°C 5 IS (A) RDS(ON) (mΩ ) 2 1.0E+00 125°C 25°C 4 3 1.0E-01 25°C 2 1 1.0E-02 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: November 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AON6716 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 6000 VDS=15V ID=20A 8 5000 Capacitance (pF) VGS (Volts) Ciss 6 4 2 4000 3000 2000 Coss 1000 0 0 0 5 10 15 20 25 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 10 30 800 1000.0 700 RDS(ON) limited 10µs 10µs 100µs 10.0 1ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 600 Power (W) ID (Amps) 100.0 500 17 5 2 10 400 300 200 100 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 Zθ JC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: November 2010 www.aosmd.com Page 4 of 7 AON6716 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 140 TA=25°C 120 Power Dissipation (W) IAR (A) Peak Avalanche Current 160 TA=100°C 100 TA=125°C 80 60 TA=150°C 40 80 60 40 20 20 0 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 100% UIS 0 Tested 25 100% Rg Tested 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 100 10000 80 1000 Power (W) Current rating ID(A) TA=25°C 60 40 17 5 2 10 100 10 20 1 0.00001 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 10 0.1 10 1000 0 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.001 150 40 RθJA=55°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1: November 2010 www.aosmd.com Page 5 of 7 AON6716 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 0.8 0.7 1.0E-02 20A 0.6 VDS=30V IR (A) VSD (V) 1.0E-04 0.5 1.0E-05 100% 0.2 UIS Tested 100% 0Rg Tested50 100 150 200 Temperature (°C) Figure 18: Diode Forward voltage vs. Junction Temperature 50 100 150 200 Temperature (°C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 50 12 16 40 Qrr 10 4 0 6 2 15 25ºC 20 25 0 0 IS (A) Figure 18: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 10 8 6 25 125ºC Qrr 4 25ºC 10 2 Irm 5 0 200 30 2.2 25ºC 16 12 1.7 trr 125ºC 14 1.2 25ºC 10 S 8 0.7 125º 400 600 800 1000 4 0.2 0 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 1: November 2010 25 6 0 0 20 Is=20A trr (ns) 25ºC 15 15 20 Irm (A) Qrr (nC) 30 20 10 18 125ºC 35 5 IS (A) Figure 19: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current Is=20A 40 0.5 125ºC 4 30 45 1 S 25ºC 10 1.5 8 Irm 2 25ºC trr (ns) 6 125ºC Irm (A) 20 8 2.5 trr 12 25ºC 30 125ºC 14 10 5 3 di/dt=800A/µs 125ºC di/dt=800A/µs S 0 Qrr (nC) IS=1A 0.3 1.0E-06 0 5A 0.4 VDS=15V 10 10A S 1.0E-03 www.aosmd.com 200 400 600 800 1000 di/dt (A/µ µs) Figure 21: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 6 of 7 AON6716 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 1: November 2010 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7