AOSMD AON6716

AON6716
30V N-Channel MOSFET
SRFET
General Description
TM
Product Summary
SRFETTM AON6716 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
VDS
30V
ID (at VGS=10V)
85A
RDS(ON) (at VGS=10V)
< 2.8mΩ
RDS(ON) (at VGS = 4.5V)
< 4.2mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
PIN1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
C
V
A
310
23
IDSM
TA=70°C
±20
67
IDM
TA=25°C
Continuous Drain
Current
Units
V
85
ID
TC=100°C
Maximum
30
A
18
Avalanche Current C
IAR
59
A
Repetitive avalanche energy L=0.1mH C
TC=25°C
EAR
174
mJ
Power Dissipation
B
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 1: November 2010
2.3
Steady-State
Steady-State
RθJA
RθJC
www.aosmd.com
W
1.4
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
PD
-55 to 150
Typ
14
40
1
°C
Max
17
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 7
AON6716
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
Typ
Max
30
V
VDS=30V, VGS=0V
0.1
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
310
TJ=125°C
20
100
VGS=10V, ID=20A
1.7
2.2
2.3
2.8
3.4
4.1
VGS=4.5V, ID=20A
3.3
4.2
VDS=5V, ID=20A
120
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.45
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
mA
nA
V
A
RDS(ON)
TJ=125°C
Units
mΩ
mΩ
S
0.7
V
85
A
3300
4100
4900
pF
560
800
1050
pF
240
400
560
pF
0.2
0.4
0.6
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
58
72
86
nC
Qg(4.5V) Total Gate Charge
29
36
43
nC
14
17
20
nC
12
17
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
7
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
11
ns
5.5
ns
40
ns
10
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
12
15
18
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
25
31
37
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: November 2010
www.aosmd.com
Page 2 of 7
AON6716
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
150
4V
VDS=5V
4.5V
120
120
5V
10V
3.5V
90
ID(A)
ID (A)
90
60
60
125°C
30
30
VGS=3V
25°C
0
0
0
1
2
3
4
5
0
1
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
4
5
6
Normalized On-Resistance
1.8
5
RDS(ON) (mΩ )
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
6
4
VGS=4.5V
3
2
VGS=10V
1
VGS=10V
ID=20A
1.6
1.4
1.2
VGS=4.5V
ID=20A
1
17
5
2
10
0.8
0
0
5
0
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
10
8
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
ID=20A
7
40
1.0E+01
6
125°C
5
IS (A)
RDS(ON) (mΩ )
2
1.0E+00
125°C
25°C
4
3
1.0E-01
25°C
2
1
1.0E-02
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: November 2010
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
Page 3 of 7
AON6716
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
6000
VDS=15V
ID=20A
8
5000
Capacitance (pF)
VGS (Volts)
Ciss
6
4
2
4000
3000
2000
Coss
1000
0
0
0
5
10
15
20
25
0
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
30
800
1000.0
700
RDS(ON)
limited
10µs
10µs
100µs
10.0
1ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
TJ(Max)=150°C
TC=25°C
600
Power (W)
ID (Amps)
100.0
500
17
5
2
10
400
300
200
100
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
Zθ JC Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: November 2010
www.aosmd.com
Page 4 of 7
AON6716
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
140
TA=25°C
120
Power Dissipation (W)
IAR (A) Peak Avalanche Current
160
TA=100°C
100
TA=125°C
80
60
TA=150°C
40
80
60
40
20
20
0
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
100% UIS
0 Tested
25
100% Rg Tested
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
10000
80
1000
Power (W)
Current rating ID(A)
TA=25°C
60
40
17
5
2
10
100
10
20
1
0.00001
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
0.1
10
1000
0
18
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.001
150
40
RθJA=55°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: November 2010
www.aosmd.com
Page 5 of 7
AON6716
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
0.8
0.7
1.0E-02
20A
0.6
VDS=30V
IR (A)
VSD (V)
1.0E-04
0.5
1.0E-05
100%
0.2 UIS Tested
100% 0Rg Tested50
100
150
200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
50
100
150
200
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
50
12
16
40
Qrr
10
4
0
6
2
15
25ºC
20
25
0
0
IS (A)
Figure 18: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
10
8
6
25
125ºC
Qrr
4
25ºC
10
2
Irm
5
0
200
30
2.2
25ºC
16
12
1.7
trr
125ºC
14
1.2
25ºC
10
S
8
0.7
125º
400
600
800
1000
4
0.2
0
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Rev 1: November 2010
25
6
0
0
20
Is=20A
trr (ns)
25ºC
15
15
20
Irm (A)
Qrr (nC)
30
20
10
18
125ºC
35
5
IS (A)
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
Is=20A
40
0.5
125ºC
4
30
45
1
S
25ºC
10
1.5
8
Irm
2
25ºC
trr (ns)
6
125ºC
Irm (A)
20
8
2.5
trr
12
25ºC
30
125ºC
14
10
5
3
di/dt=800A/µs
125ºC
di/dt=800A/µs
S
0
Qrr (nC)
IS=1A
0.3
1.0E-06
0
5A
0.4
VDS=15V
10
10A
S
1.0E-03
www.aosmd.com
200
400
600
800
1000
di/dt (A/µ
µs)
Figure 21: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Page 6 of 7
AON6716
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 1: November 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 7 of 7