Datasheet

AON7400
30V N-Channel MOSFET
General Description
Product Summary
The AON7400 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in DC - DC converters and
Load Switch applications.
ID (at VGS=10V)
30V
26A
RDS(ON) (at VGS=10V)
< 12.5mΩ
RDS(ON) (at VGS = 4.5V)
< 14.5mΩ
Top View
VDS
DFN 3x3 EP
Bottom View
D
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 3: Mar. 2011
35
Steady-State
Steady-State
W
14
3.1
RθJA
RθJC
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W
2
TJ, TSTG
Symbol
t ≤ 10s
A
9
PDSM
Junction and Storage Temperature Range
A
10
PD
TA=25°C
V
80
IDSM
TA=70°C
±12
20
IDM
TA=25°C
Units
V
26
ID
TC=100°C
Maximum
30
-55 to 150
Typ
30
60
3.1
°C
Max
40
75
3.7
Units
°C/W
°C/W
°C/W
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AON7400
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
1
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
80
TJ=55°C
VDS=0V, VGS= ±12V
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS=5V, ID=10A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
Output Capacitance
Rg
Gate resistance
nA
1.55
2.5
V
10.5
12.5
A
12.2
0.74
1210
VGS=0V, VDS=15V, f=1MHz
mΩ
14.5
mΩ
1
V
35
A
1452
pF
40
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
100
14.7
VGS=4.5V, ID=10A
Crss
µA
5
VGS=10V, ID=10A
Units
V
VDS=30V, VGS=0V
Zero Gate Voltage Drain Current
RDS(ON)
Max
30
IDSS
Coss
Typ
S
330
396
pF
85
119
pF
1.2
1.6
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
22
28
nC
Qg(4.5V) Total Gate Charge
10
13
nC
Qgs
Gate Source Charge
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=10A
0.8
3.7
nC
Qgd
Gate Drain Charge
2.7
nC
tD(on)
Turn-On DelayTime
10
ns
tr
Turn-On Rise Time
6.3
ns
tD(off)
Turn-Off DelayTime
21
ns
tf
Turn-Off Fall Time
2.8
ns
VGS=10V, VDS=15V, RL=1.1Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=10A, dI/dt=500A/µs
36
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
47
45
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 3: Mar. 2011
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Page 2 of 5
AON7400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
30
10V
VDS=5V
4.5V
25
80
6V
20
ID(A)
ID (A)
60
40
3V
15
10
20
125°C
5
25°C
VGS=2.5V
0
0
0
1
2
3
4
0
5
1
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
20
Normalized On-Resistance
2
VGS=4.5V
15
RDS(ON) (mΩ )
2
10
VGS=10V
5
1.8
VGS=10V
ID=10A
1.6
17
5
2
VGS=4.5V
10
1.4
1.2
ID=10A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
20
1.0E+02
ID=10A
1.0E+01
IS (A)
RDS(ON) (mΩ )
40
1.0E+00
125°C
15
125°C
1.0E-01
1.0E-02
10
25°C
25°C
1.0E-03
1.0E-04
1.0E-05
5
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 3: Mar. 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2000
10
VDS=15V
ID=10A
1600
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
1200
800
Coss
2
400
0
0
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
25
Crss
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
10000
1000.0
TA=25°C
10.0
1000
10µs
100µ
RDS(ON)
limited
Power (W)
ID (Amps)
100.0
1m
1.0
10ms
TJ(Max)=150°C
TA=25°C
0.1
100
10
10s
DC
0.0
1
0.01
0.1
1
VDS (Volts)
10
100
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 3: Mar. 2011
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Page 4 of 5
AON7400
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev 3: Mar. 2011
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 5