AP4500GYT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BVDSS
D1/D2
▼ Simple Drive Requirement
▼ Good Thermal Performance
RDS(ON)
▼ Fast Switching Performance
ID
▼ RoHS Compliant & Halogen-Free S1G1
S2
G2
®
PMPAK 3x3
Description
20V
21mΩ
8.9A
P-CH BVDSS
AP4500 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
-20V
RDS(ON)
60mΩ
ID
-5.3A
D1
D2
G2
G1
S2
S1
The PMPAK ® 3x3 is special for voltage conversion application
using standard infrared reflow technique with the backside heat
sink to achieve the good thermal performance.
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
20
-20
V
+12
+12
V
Continuous Drain Current
3
8.9
-5.3
A
Continuous Drain Current
3
7.1
-4.3
A
20
-20
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
2.5
W
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
10
℃/W
50
℃/W
1
201206071
AP4500GYT-HF
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
20
-
-
V
VGS=4.5V, ID=8A
-
16.6
21
mΩ
VGS=2.5V, ID=4A
-
25.4
36
mΩ
0.5
0.75
1.5
V
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=4A
-
18
-
S
IDSS
Drain-Source Leakage Current
VDS=16V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=4A
-
8
12.8
nC
Qgs
Gate-Source Charge
VDS=16V
-
1.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
td(on)
Turn-on Delay Time
VDS=10V
-
11
-
ns
tr
Rise Time
ID=1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
16
-
ns
tf
Fall Time
VGS=5V
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
450
720
pF
Coss
Output Capacitance
VDS=10V
-
140
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Min.
Typ.
IS=2.1A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=6A, VGS=0V
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
14
-
nC
2
AP4500GYT-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max.
Unit
VGS=0V, ID=-250uA
-20
-
-
V
VGS=-4.5V, ID=-5A
-
45.8
60
mΩ
VGS=-2.5V, ID=-3A
-
62.6
90
mΩ
-0.5
-0.73
-1.5
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-10V, ID=-3A
-
12
-
S
IDSS
Drain-Source Leakage Current
VDS=-16V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-3A
-
9
14.4
nC
Qgs
Gate-Source Charge
VDS=-16V
-
1.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3
-
nC
td(on)
Turn-on Delay Time
VDS=-10V
-
8
-
ns
tr
Rise Time
ID=-1A
-
15
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
26
-
ns
tf
Fall Time
VGS=-5V
-
21
-
ns
Ciss
Input Capacitance
VGS=0V
-
710
1140
pF
Coss
Output Capacitance
VDS=-10V
-
125
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Min.
Typ.
Max.
Unit
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward On Voltage
IS=-2.1A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-3A, VGS=0V
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 90oC/W at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4500GYT-HF
N-Channel
20
20
5.0V
4.5V
3.5V
2.5V
ID , Drain Current (A)
16
16
V G = 2.0V
12
8
12
8
4
4
0
0
0
2
4
6
0
8
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
40
ID=4A
I D =8A
V G =4.5V
Normalized RDS(ON)
T A =25 o C
RDS(ON) (mΩ)
5.0V
4.5V
3.5V
2.5V
V G = 2.0V
o
T A = 150 C
ID , Drain Current (A)
o
T A =25 C
30
1.4
1.0
20
10
0.6
1
2
3
4
5
-50
0
V GS , Gate-to-Source Voltage (V)
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
8
I D =250uA
1.2
T j =25 o C
o
T j =150 C
4
Normalized VGS(th)
IS(A)
6
0.8
0.4
2
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4500GYT-HF
N-Channel
f=1.0MHz
600
ID=4A
V DS = 16 V
4
500
C iss
C (pF)
VGS , Gate to Source Voltage (V)
5
3
400
300
2
200
C oss
C rss
1
100
0
0
0
3
6
1
9
5
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Operation in this area
limited by RDS(ON)
100us
ID (A)
10
Normalized Thermal Response (Rthja)
1
1ms
1
10ms
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
0.01
Duty factor=0.5
0.2
0.1
PDM
0.1
t
0.05
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.02
Rthja = 90℃/W
0.01
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
10
V DS =5V
ID , Drain Current (A)
ID , Drain Current (A)
8
20
T j =150 o C
T j =25 o C
10
T j = -40 o C
6
4
2
0
0
0
1
2
3
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
4
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
5
AP4500GYT-HF
P-Channel
20
20
-5.0V
-4.5V
-3.5V
-2.5V
T A = 150 C
16
-ID , Drain Current (A)
16
-ID , Drain Current (A)
o
-5.0V
-4.5V
-3.5V
-2.5V
o
T A = 25 C
12
V G = -2.0V
8
4
12
V G =-2.0V
8
4
0
0
0
1
2
3
4
5
6
0
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
90
I D = -5 A
V G = -4.5 V
ID=-3A
T A =25 o C
80
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
70
60
1.2
0.8
50
0.4
40
1
2
3
4
5
-50
0
-V GS , Gate-to-Source Voltage (V)
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.6
I D =-250uA
6
1.2
T j =25 o C
Normalized -VGS(th)
-IS(A)
T j =150 o C
4
0.8
0.4
2
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4500GYT-HF
P-Channel
5
f=1.0MHz
1000
4
800
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
I D = -3A
V DS = -16V
3
600
2
400
1
200
C oss
C rss
0
0
0
2
4
6
8
1
10
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
Fig 8. Typical Capacitance Characteristics
1
10
Normalized Thermal Response (Rthja)
100
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
100us
Operation in this area
limited by RDS(ON)
1ms
1
10ms
100ms
1s
0.1
DC
o
T A =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
PDM
t
0.05
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.02
Rthja = 90℃/W
0.01
Single Pulse
0.01
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
6
V DS =-5V
o
T j =25 C
5
-ID , Drain Current (A)
-ID , Drain Current (A)
T j = -40 o C
o
T j =150 C
20
10
4
3
2
1
0
0
0
1
2
3
4
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
5
25
50
75
100
125
150
o
T A , Ambient Temperature ( C )
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
7