ASX521 250-3000 MHz MMIC Amplifier Features Description ·19 dB Gain at 2000 MHz The ASX521, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems up to 3 GHz. The amplifier is available in an SOIC-8 package and passes through the stringent DC, RF, and reliability tests. ·31.5 dBm P1dB at 2000 MHz ·48 dBm OIP3 at 2000 MHz ·MTTF > 100 Years ·Two Power Supplies Package Style: SOIC-8 Typical Performance Parameters Units Application Circuit Typical Freq. MHz 900 2000 2450 900 2000 2450 900 2000 2450 2700 Gain dB 28 19 18.5 28 19 18.5 28 19 18.5 16.5 S11 dB -15 -16 -18 -15 -16 -18 -15 -16 -18 -15 S22 dB -11 -9 -15 -11 -9 -15 -11 -9 -15 -15 dBm 44 44 44 47 45 45 48 48 48 48 dB 9 5 5.1 10 5 5.1 11 5.6 5.1 5.3 P1dB dBm 30.5 30 30 32 31.5 31.5 32 31.5 31.5 31.5 Current mA 510 650 870 Voltage V 4.3 4.7 5 OIP31) NF ·CDMA ·GSM ·WCDMA ·WiBro ·WLAN ·WiMAX * Performance tested at 50 W system and a room temperature. 1) OIP3 measured with two tones at an output power of +14 dBm/tone separated by 1 MHz. Product Specifications* Parameters Testing Frequency Units Gain dB S11 dB S22 Min MHz 18 dBm 19 -9 46 48 Noise Figure dB Output P1dB dBm 30 31.5 Current mA 840 870 Device Voltage Max -16 dB Output IP3 Typ 2000 5.6 V 5.8 900 5 * 100% in-house DC & RF testing is done on packaged products before taping. Pin Configuration Absolute Maximum Ratings Parameters Rating Pin No. Function 1 2nd stage RF IN Operating Case Temperature -40 to +85°C Storage Temperature -40 to +150°C 2 1st stage RF OUT +6 V 3,5,8 GND Operating Junction Temperature +150°C 4 1st stage RF IN Input RF Power (CW, 50ohm matched)* 25 dBm 6,7 2nd stage RF OUT Device Voltage * Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf 1/12 ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASX521 250-3000 MHz MMIC Amplifier Outline Drawing Part No. Symbols ASX521 ● A A1 A2 B C D D2 E E1 E2 e L y q |L1-L1’| L1 Pin No. 1 2 3 4 Dimensions (In mm) MIN NOM MAX 1.40 1.50 1.60 0.00 --0.10 --1.45 --0.33 --0.51 0.19 --0.25 4.80 --5.00 3.20 3.30 3.40 5.80 6.00 6.20 3.80 3.90 4.00 2.30 2.40 2.50 --1.27 --0.40 --1.27 ----0.10 --0° 8° ----0.12 1.04REF Function 2nd stage RF IN 1st stage RF OUT GND 1st stage RF IN Pin No. 5 6 7 8 Function. GND 2nd stage RF OUT 2nd stage RF OUT GND Note: 1. Backside metal paddle is RF and DC ground. Mounting Recommendation (in mm) Note: 1. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 2. To ensure reliable operation, device ground paddle-to-ground pad soldering is critical. 3. Add mounting screws near the part to fasten the board to a heat sinker. Ensure that the ground / thermal via region contacts the heat sinker. 4. A proper heat dissipation path underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can result from inappropriate heat dissipation. ESD Classification HBM Class 1B Voltage Level: 500 V~1000 V MM Class A Voltage Level: <200 V CAUTION: ESD-sensitive device! Moisture Sensitivity Level (MSL) Level 3 at 260°C reflow 2/12 ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASX521 250-3000 MHz MMIC Amplifier Frequency (MHz) APPLICATION CIRCUIT 824~849 Magnitude S21 (dB) 30.5 Magnitude S11 (dB) -14 Magnitude S22 (dB) -8 CDMA Rx Output P1dB (dBm) 32 824 ~ 849 MHz Output IP31) (dBm) 47 Noise Figure (dB) 11 +5 V Device Voltage (V) 5 Current (mA) 870 1) OIP3 is measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C6=1 mF C8=1 mF C5=100pF C7=100pF R2=7.5 W L1=56 nH (Coil Inductor) C4=10 pF 2.5 mm RF OUT ASX521 L2=56 nH RF IN 7 mm C1=3.9 pF 8 mm C2=100 pF R1=15 W C3=9 pF S-parameters 35 0 -5 30 -10 S11 (dB) Gain (dB) 25 20 -15 -20 15 10 600 -25 700 800 900 1000 1100 1200 -30 600 700 800 Frequency (MHz) 900 1000 1100 1200 Frequency (MHz) 5 5 4 Stability Factor S22 (dB) 0 -5 3 2 -10 1 -15 600 0 700 800 900 1000 1100 1200 0 500 Frequency (MHz) 3/12 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASX521 250-3000 MHz MMIC Amplifier Frequency (MHz) 869~894 Magnitude S21 (dB) APPLICATION CIRCUIT CDMA Tx 30.5 Magnitude S11 (dB) -15 Magnitude S22 (dB) -7.5 Output P1dB (dBm) 32 1) 869 ~ 894 MHz +5 V Output IP3 (dBm) 47 Noise Figure (dB) 11 Device Voltage (V) 5 Current (mA) 870 1) OIP3 is measured with two tones at an output power of +16 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C6=1 mF C8=1 mF C5=100pF C7=100pF R2=6.8 W L1=56 nH (Coil Inductor) C4=12 pF RF OUT 1.5 mm ASX521 L2=56 nH RF IN 7 mm 6 mm C2=100 pF R1=15 W C3=7.5 pF C1=3.3 pF 35 0 30 -5 25 -10 S11 (dB) Gain (dB) S-parameters 20 15 10 600 -15 -20 700 800 900 1000 1100 1200 -25 600 700 800 Frequency (MHz) 900 1000 1100 1200 Frequency (MHz) 5 5 4 Stability Factor S22 (dB) 0 -5 3 2 -10 1 -15 600 0 700 800 900 1000 1100 1200 0 500 Frequency (MHz) 4/12 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASX521 250-3000 MHz MMIC Amplifier Frequency (MHz) APPLICATION CIRCUIT GSM Rx 890~915 Magnitude S21 (dB) 28 Magnitude S11 (dB) -15 Magnitude S22 (dB) -11 Output P1dB (dBm) 32 1) 890 ~ 915 MHz +5 V Output IP3 (dBm) 48 Noise Figure (dB) 11 Device Voltage (V) 5 Current (mA) 890 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C6=1 mF C8=1 mF C5=100pF C7=100pF R2=6.8 W L1=56 nH (Coil Inductor) C4=12 pF RF OUT 2 mm ASX521 L2=56 nH RF IN 7 mm 7 mm C2=100 pF R1=15 W C3=7 pF C1=2.2 pF S-parameters 35 0 30 -5 S11 (dB) Gain (dB) 25 20 -10 -15 15 10 600 700 800 900 1000 1100 1200 -20 600 700 800 Frequency (MHz) 5 0 4 Stability Factor 5 S22 (dB) -5 -10 -15 -20 600 1000 1100 1200 3 2 1 0 700 800 900 1000 1100 1200 0 500 Frequency (MHz) 5/12 900 Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASX521 250-3000 MHz MMIC Amplifier Frequency (MHz) APPLICATION CIRCUIT GSM Tx 935~960 Magnitude S21 (dB) 27 Magnitude S11 (dB) -15 Magnitude S22 (dB) -11 Output P1dB (dBm) 32 1) 935 ~ 960 MHz +5 V Output IP3 (dBm) 47 Noise Figure (dB) 10.5 Device Voltage (V) 5 Current (mA) 870 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C6=1 mF C8=1 mF C5=100pF C7=100pF R2=6.8 W L1=18 nH (Coil Inductor) C4=12 pF L2=33 nH RF IN RF OUT 1.5 mm ASX521 C2=100 pF 6 mm 6.5 mm R1=15 W C3=7 pF C1=2.2 pF S-parameters 35 0 -5 30 -10 S11 (dB) Gain (dB) 25 20 -15 -20 15 10 600 -25 700 800 900 1000 1100 1200 -30 600 700 800 Frequency (MHz) 900 1000 1100 1200 Frequency (MHz) 5 5 4 Stability Factor S22 (dB) 0 -5 3 2 -10 1 -15 600 0 700 800 900 1000 1100 1200 0 500 Frequency (MHz) 6/12 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASX521 250-3000 MHz MMIC Amplifier Frequency (MHz) 1920~1980 Magnitude S21 (dB) 19 Magnitude S11 (dB) -16 Magnitude S22 (dB) -9 WCDMA Rx Output P1dB (dBm) 31.5 1920 ~ 1980 MHz Output IP31) (dBm) 48 +5 V Noise Figure (dB) 5.6 APPLICATION CIRCUIT Device Voltage (V) 5 Current (mA) 870 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C6=1 mF C8=1 mF C5=100pF C7=100pF L1=18 nH (Coil Inductor) L2=33 nH C4=2.2 pF (Coil Inductor) C3=1.2 pF RF IN R1=5.1 W 1.5 mm ASX521 5 mm RF OUT L3=2.2 nH C1=2 pF C2=1.5 pF 30 0 25 -5 20 -10 S11 (dB) Gain (dB) S-parameters 15 o -40 c 25oc 85oc 10 -20 5 0 1700 -15 -40oc 25oc 85oc -25 1800 1900 2000 2100 2200 -30 1700 1800 1900 Frequency (MHz) 5 -5 4 Stability Factor 0 S22 (dB) -10 -15 -40oc 25oc 85oc -20 -25 1700 1800 1900 2000 2100 2200 2100 3 2 1 2200 0 0 500 Frequency (MHz) 7/12 2000 Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASX521 250-3000 MHz MMIC Amplifier Gain vs. Temperature 960 26 920 24 880 22 Gain (dB) Current (mA) Current vs. Temperature 840 800 18 760 720 -60 20 Frequency = 1950 MHz 16 -40 -20 0 20 40 60 80 14 -60 100 -40 -20 0 Temperature (oC) 20 40 60 80 100 Temperature (oC) Output IP3 vs. Tone Power (Frequency = 1950 MHz) P1dB vs. Temperature 36 65 60 34 Output IP3 (dBm) P1dB (dBm) 55 32 30 45 40 -40oc 25oc 85oc 35 Frequency = 1950 MHz 28 50 30 26 -60 -40 -20 0 20 40 60 80 100 25 10 11 Temperature (oC) 8/12 12 13 14 15 16 17 18 19 20 Pout per Tone (dBm) ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASX521 250-3000 MHz MMIC Amplifier Frequency (MHz) APPLICATION CIRCUIT 2110~2170 Magnitude S21 (dB) 18 Magnitude S11 (dB) -15 Magnitude S22 (dB) -7 WCDMA Tx Output P1dB (dBm) 31.5 2110 ~ 2170 MHz Output IP31) (dBm) 48 Noise Figure (dB) 7.5 +5 V Device Voltage (V) 5 Current (mA) 870 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C6=1 mF C8=1 mF C5=100pF C7=100pF L1=18 nH (Coil Inductor) L2=33 nH C4=1.5 pF (Coil Inductor) C3=1.2 pF RF IN R1=5.1 W 1 mm ASX521 4.5 mm RF OUT L3=1.8 nH C1=1.5 pF C2=0.5 pF 25 0 20 -5 15 -10 S11 (dB) Gain (dB) S-parameters 10 5 0 1900 -15 -20 2000 2100 2200 2300 2400 -25 1900 2000 2100 Frequency (MHz) 5 -5 4 Stability Factor 0 S22 (dB) -10 -15 -20 -25 1900 2300 2400 3 2 1 2000 2100 2200 2300 2400 0 0 500 Frequency (MHz) 9/12 2200 Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASX521 250-3000 MHz MMIC Amplifier Frequency (MHz) APPLICATION CIRCUIT 2300~2400 Magnitude S21 (dB) 18 Magnitude S11 (dB) -17 Magnitude S22 (dB) -11 WiBro Output P1dB (dBm) 31 2300 ~ 2400 MHz Output IP31) (dBm) 46.5 Noise Figure (dB) 6.5 Device Voltage (V) 5 +5 V Current (mA) 870 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. 2 Schematic Board Layout (FR4, 40x40 mm , 0.8T) Vcc=5 V D1=5.6V Zener Diode C6=1 mF *C4 shall be placed as close as possible to the pin. C8=1 mF C5=100pF C7=100pF L1=27 nH (Coil Inductor) L2=27 nH C4=1.5 pF (Coil Inductor) C2=56 pF RF OUT ASX521 RF IN R1=5 W C3=1.8 pF C1=1.5 pF 25 0 20 -5 15 -10 S11 (dB) Gain (dB) S-parameters & K-factor 10 5 0 1800 -15 -20 2000 2200 2400 2600 2800 3000 -25 1800 2000 2200 Frequency (MHz) 5 5 4 Stability Factor 10 S22 (dB) 0 -5 -10 -15 1800 2600 2800 3000 3 2 1 0 2000 2200 2400 2600 2800 3000 0 500 Frequency (MHz) 10/12 2400 Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASX521 250-3000 MHz MMIC Amplifier Frequency (MHz) APPLICATION CIRCUIT 2400~2500 Magnitude S21 (dB) 18.5 Magnitude S11 (dB) -18 Magnitude S22 (dB) -15 WLAN Output P1dB (dBm) 31.5 2400 ~ 2500 MHz Output IP31) (dBm) 48 Noise Figure (dB) 5.1 +5 V Device Voltage (V) 5 Current (mA) 870 1) OIP3 is measured with two tones at an output power of +14 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C7=1 mF C9=1 mF C6=100pF C8=100pF L1=10 nH (Coil Inductor) L2=22 nH C5=1 pF (Coil Inductor) C3=100 pF 2 mm ASX521 RF IN RF OUT C1=5 pF C4=1.5 pF C2=1.8 pF 25 0 20 -5 15 -10 S11 (dB) Gain (dB) S-parameters 10 5 0 1800 -15 -20 2000 2200 2400 2600 2800 3000 -25 1800 2000 2200 Frequency (MHz) 5 -5 4 Stability Factor 0 S22 (dB) -10 -15 -20 -25 1800 2600 2800 3000 3 2 1 0 2000 2200 2400 2600 2800 3000 500 Frequency (MHz) 11/12 2400 Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010 ASX521 250-3000 MHz MMIC Amplifier Frequency (MHz) APPLICATION CIRCUIT 2600~2700 Magnitude S21 (dB) 16.5 Magnitude S11 (dB) -15 Magnitude S22 (dB) -15 WiMAX Output P1dB (dBm) 31.5 2600 ~ 2700 MHz Output IP31) (dBm) 48 Noise Figure (dB) 5.3 +5 V Device Voltage (V) 5 Current (mA) 870 1) OIP3 is measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T) Schematic Vcc=5 V D1=5.6V Zener Diode C7=1 mF C9=1 mF C6=100pF C8=100pF L1=10 nH (Coil Inductor) L2=22 nH C5=1 pF (Coil Inductor) C3=100 pF 1 mm ASX521 RF IN C1=5 pF RF OUT C4=1.5 pF C2=1.8 pF 25 0 20 -5 15 -10 S11 (dB) Gain (dB) S-parameters 10 5 0 2000 -15 -20 2200 2400 2600 2800 3000 3200 -25 2000 2200 2400 Frequency (MHz) 5 -5 4 Stability Factor 0 S22 (dB) -10 -15 -20 -25 2000 2800 3000 3200 3 2 1 2200 2400 2600 2800 3000 3200 0 0 500 Frequency (MHz) 12/12 2600 Frequency (MHz) 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. · [email protected] · Tel: +82-42-528-7223 February 2010