BLV297 N-channel Enhancement Mode Power MOSFET • Ease of Paralleling BVDSS 200V • Fast Switching RDS(ON) 2.0Ω Ω • Simple Drive Requirements ID 0.65A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency logic level circuit. o Die size with scribe line Scribe line 1570µm X 1570µm o Die Thickness o Metallization 300± 20um 80um Top Al Bottom Ti / Ni / Ag o Bonding Pad Size Gate 140µm X 102µm Source 540µm X 540µm o Passivation Electrical Characteristics ( TC=25C unless otherwise noted ) Symbol Parameter Test Conditions Min. Typ. Max. Units VGS=0V, ID=250uA 200 - - V - - 2.0 Ω 0.5 - 1.8 V BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.65A VGS(th) Gate Threshold Voltage VDS=VGS, ID=400uA IDSS Drain-Source Leakage Current VDS=200V, VGS=0V - - 0.1 uA IGSS Gate-Source Leakage Current VGS= 20V - - 10 nA VSD Forward On Voltage VGS=0V, IS=0.65A - - 1.2 V http://www.belling.com.cn -1Total 1 Pages 2/27/2008