TIGER ELECTRONIC CO.,LTD Product specification IRFS640B 200V N-Channel MOSFET DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary,planar, DMOS technology. This advanced technology has been minimize on-state resistance, provide superior switchingespecially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. O ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Symbol Value Unit VDSS 200 V Drain Current - Continuous ID 18 A Drain Current - Pulsed IDM 72 A Drain-Source Voltage Gate-Source Voltage VGSS Power Dissipation 30 PD 125 W Tj 150 o Tstg -55~150 o Max. Operating Junction Temperature Storage Temperature V C C ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Drain-Source Breakdown Voltage Symbol Test Conditions BVDSS VGS = 0V, ID =250 A Min. Typ. Max. 200 Unit V Zero Gate Voltage Drain Current IDSS VDS =200V, VGS =0V 10 uA Gate-Body Leakage Current, Forward IGSSF VGS =30V, VDS =0V 100 uA Gate-Body Leakage Current, Reverse IGSSR VGS = -30V, VDS =0V -100 uA Gate Threshold Voltage VGS(th) VDS = VGS , ID =250 4.0 V Static Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 10.0 A 0.18 W 2.0 V Drain-Source Diode Forward Voltage VSD A VGS = 0 V, IS = 18.0 A 2.0 0.14