TGS FQPF4N60

TIGER ELECTRONIC CO.,LTD
Product specification
FQPF4N60
600V N-Channel MOSFET
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using proprietary,planar,
DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency switch mode power supplies.
O
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter
l
Value
Unit
VDSS
600
V
Drain Current - Continuous
ID
4.4
A
Drain Current - Pulsed
IDM
17.6
A
VGSS
±30
V
Power Dissipation
PD
106
W
Max. Operating Junction Temperature
Tj
150
o
Tstg
-55~150
o
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature
C
C
TO-220F
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Drain-Source Breakdown Voltage
Symbol
Test Conditions
BVDSS VGS = 0V, ID =250μA
Min.
Typ.
Max.
Unit
600
—
—
V
Zero Gate Voltage Drain Current
IDSS
VDS =600V, VGS =0V
—
—
10
uA
Gate-Body Leakage Current, Forward
IGSSF
VGS =30V, VDS =0V
—
—
100
nA
Gate-Body Leakage Current, Reverse
IGSSR
VGS = -30V, VDS =0V
—
—
-100
nA
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID =250μA
3.0
—
5.0
V
Static Drain-Source On-Resistance
RDS(on) VGS = 10 V, ID = 2.2 A
—
1.77
2.2
W
—
—
1.4
V
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 4.4 A