TIGER ELECTRONIC CO.,LTD Product specification FQPF4N60 600V N-Channel MOSFET DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using proprietary,planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. O ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter l Value Unit VDSS 600 V Drain Current - Continuous ID 4.4 A Drain Current - Pulsed IDM 17.6 A VGSS ±30 V Power Dissipation PD 106 W Max. Operating Junction Temperature Tj 150 o Tstg -55~150 o Drain-Source Voltage Gate-Source Voltage Storage Temperature C C TO-220F ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Drain-Source Breakdown Voltage Symbol Test Conditions BVDSS VGS = 0V, ID =250μA Min. Typ. Max. Unit 600 — — V Zero Gate Voltage Drain Current IDSS VDS =600V, VGS =0V — — 10 uA Gate-Body Leakage Current, Forward IGSSF VGS =30V, VDS =0V — — 100 nA Gate-Body Leakage Current, Reverse IGSSR VGS = -30V, VDS =0V — — -100 nA Gate Threshold Voltage VGS(th) VDS = VGS , ID =250μA 3.0 — 5.0 V Static Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 2.2 A — 1.77 2.2 W — — 1.4 V Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.4 A