TIGER ELECTRONIC CO.,LTD Product specification FQP50N06 60V N-Channel MOSFET DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) O Parameter l Value Unit VDSS 60 V Drain Current - Continuous ID 50 A Drain Current - Pulsed IDM 200 A VGSS ±25 V Power Dissipation PD 120 W Max. Operating Junction Temperature Tj 150 o Tstg -55~150 o Drain-Source Voltage Gate-Source Voltage Storage Temperature C C TO-220 ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Drain-Source Breakdown Voltage Symbol Test Conditions BVDSS VGS = 0V, ID =250μA Min. Typ. Max. Unit 60 — — V Zero Gate Voltage Drain Current IDSS VDS =60V, VGS =0V — — 1.0 uA Gate-Body Leakage Current, Forward IGSSF VGS =25V, VDS =0V — — 100 nA Gate-Body Leakage Current, Reverse IGSSR VGS = -25V, VDS =0V — — -100 nA Gate Threshold Voltage VGS(th) VDS = VGS , ID =250μA 2.0 — 4.0 V Static Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 25 A — 18 22 mΩ Forward Transconductance gFS VDS = 25 V, ID = 25 A — 22 — S Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 50 A — — 1.5 V