CE 1N4448 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 500mW power dissipation . The diode is also available in the Mini-MELF case with the type designation LL4448 MECHANICAL DATA . Case: MinMelf glass case(SOD- 80) . Weight: Approx. 0.05gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Symbol Value Units VR 75 Volts Peak reverse voltage VRM 100 Volts Average rectified current, Half wave rectification with IAV 1501) mA Surge forward current at t<1S and TJ=25 IFSM 500 mW Power dissipation at TA=25 Ptot 5001) mW TJ 175 TSTG -65 to + 175 Reverse voltage Resistive load at TA=25 and F 50Hz Junction temperature Storage temperature range 1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35) ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Forward voltage at IF=5mA at IF=10mA Leakage current Symbols Min. VF 0.62 Max. Units 0.72 V VF 1 V IR 25 nA at VR=20V at VR=75V IR 5 A IR 50 A CJ 4 pF at VR=20V, TJ=150 Junction capacitance at VR=VF=0V Reverse breakdown voltage tested with 100 A puse Typ. V(BR)R Reverse recovery time from IF=10mA to IR=1mA, 100 V 4 trr ns VR=6V, RL=100 Thermal resistance junction to ambient Rectification efficience at f=100MHz,VRF=2V R 3501) JA 3501) 0.45 1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 1 of 3 CE 1N4448 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE RATINGS AND CHATACTERISTIC CURVES LL4448 FIG.2-DYNAMIC FORWARD RESISTANCE FLG.1-FORWARD CHARACTERISTICS FIG.3-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE VERSUS FORWARD CURRENT FIG.4-RELATIVE CAPACITANCE VERSUS VOLTAGE Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 2 of 3 CE 1N4448 CHENYI ELECTRONICS FIG.5-RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT SMALL SIGNAL SWITCHING DIODE FIG.6-LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 3 of 3