SMD Schottky Barrier Diode CDBV0140-G IO=0.1A VR=30V RoHS Device SOD-323 Features -High current rectifier Schottky diode. -Low voltage, low inductance. 0.071 (1.80) 0.063 (1.60) -For power supply. 0.014 (0.35) 0.010 (0.25) Mechanical data 0.055 (1.40) 0.047 (1.20) 0.106 (2.70) 0.098 (2.50) - Case: SOD-323, Molded Plastic 0.006 (0.15) - Terminals: Solderable per MIL-STD-202, Method 208 0.003 (0.08) 0.039 (1.00)max 0.019 (0.475)REF. 0.004 (0.10)max - Marking: 4 Dimensions in inches and (millimeters) Maximum Ratings (at Ta=25°C unless otherwise noted) Symbol Limits Unit Peak reverse voltage V RM 45 V DC reverse voltage VR 40 V Average rectified current IO 0.1 A Peak forward surge current I FSM 1 A Junction temperature range TJ -55 ~ +125 O C Storage temperature range T STG -55 ~ +125 O C Parameter Electrical Characteristics (at Ta=25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Forward voltage I F =100mA I F =10mA VF 0.55 0.34 V Reverse current V R =10V IR 30 μA Capacitance between terminals V R =10V, f=1MHz CT 6 pF REV:A QW-BA014 Page 1 SMD Schottky Barrier Diode ELECTRICAL CHARACTERISTIC CURVES (CDBV0140-G) Fig.1 Forward Characteristics Fig.2 Reverse Characteristics 10m 1 000 O 125 C 1m 100 O 75 C 100 μ 10μ 25 OC 10 1μ 0.1μ 1 0 0.1 0 .2 0. 4 0.3 0.5 0.6 10 0 20 40 30 V R , Reverse Voltage (V) V F , Forward Voltage (V) Fig.3 Capacitance Between Terminals Characteristics Fig.4 Forward Derating Curve 1 00 100 80 60 10 40 20 1 0 0 5 10 15 20 25 V R , Reverse Voltage (V) 30 35 0 24 50 75 10 0 125 1 50 T A, Ambient Temperature ( O C) REV:A QW-BA014 Page 2