SMD Schottky Barrier Diode CDBT0540-G RoHS Device Features SOT-23 0.119(3.00) -Small surface mount type. 0.110(2.80) 3 -Low reverse current and low forward voltage. 0.056(1.40) 0.047(1.20) -High reliability. 1 2 0.006(0.15) 0.083(2.10) Marking: D3A 0.002(0.05) 0.066(1.70) 0.044(1.10) 0.103(2.60) 0.035(0.90) 0.086(2.20) 0.006(0.15) max 0.020(0.50) 0.007(0.20) min 0.013(0.35) Dimensions in inches and (millimeter) Maximum Ratings (at Ta=25°C unless otherwise noted) Symbol Value Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 40 V Peak surge forward voltage IFSM 3 A Mean rectifying current IO 0.5 A Power dissipation PD 250 mW RθJA 500 Junction temperature TJ 125 O C Storage temperature TSTG -40 to +125 O C Parameter Thermal resistance, junction to ambient O C/W Electrical Characteristics (at Ta=25°C unless otherwise noted) Parameter Symbol Conditions Reverse breakdown voltage VBR IR=100μA Forward voltage VF IF=500mA Reverse current IR Capacitance between terminals CT Min Typ. Max 40 Unit V 0.55 V VR=10V 30 μA VR=30V 50 μA VR=0V, f=1MHz 125 pF VR=10V, f=1MHz 20 pF REV:B Page 1 QW-BA016 Comchip Technology CO., LTD. SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBT0540-G) Fig.2 Reverse Characteristics Fig.1 Forward Characteristics 1 10m O C IR, Reverse Current (A) O 5 O TA C =1 25 10m O 5 TA =-2 5 C O TA =2 1m C TA =7 IF, Forward Current (A) 100m 100μ T A =1 2 5 C 1m 100μ O T A= 7 5 C 10μ O TA = 25 C 1μ 10μ 1μ 0.1μ 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 5 10 15 20 25 VF, Forward Voltage (V) VR, Reverse Voltage (V) Fig.3 Capacitance Between Terminals Characteristics Fig.4 Power Derating Curve 30 35 125 150 PD, Power Dissipation (W) CT, Capacitance Between Terminals (pF) 1000 100 10 1 0.5 0 0 5 10 15 20 25 0 VR, Reverse Voltage (V) 25 50 75 100 TA, Ambient Temperature (°C) REV:B Page 2 QW-BA016 Comchip Technology CO., LTD.