PNP 2N3789 – 2N3790 – 2N3791 – 2N3792 EPITAXIAL-BASE TRANSISTORS The 2N3789, 2N3790, 2N3791 and 2N3792 are silicon epitaxial-base PNP power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The 2N3713, 2N3714, 2N3715 and 2N3716 complementary NPN types are respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO Ratings Collector-BaseVoltage Collector-Emitter Voltage IE = 0 IB = 0 VEBO IC IB Emitter-Base Voltage Collector Current Base Current PD Total Device Dissipation @ TC = 25° TJ TS Junction Temperature Storage Temperature Value 2N3789 2N3791 2N3790 2N3792 2N3789 2N3791 2N3790 2N3792 IC = 0 Unit -80 V -100 -60 V -80 -7 -10 -4 V A A 150 W -65 to +200 °C Value Unit 1.17 °C/W THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case (Max) 05/11/2012 COMSET SEMICONDUCTORS 1|4 PNP 2N3789 – 2N3790 – 2N3791 – 2N3792 ELETRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(BR) VCEO(SUS) ICEO ICEV IEBO hFE VCE(SAT) Ratings Test Condition(s) Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage (*) Collector-Emitter Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain (*) (**) Collector-Emitter saturation Voltage (*) (**) 05/11/2012 2N3789 2N3791 IC=-200 mA, IB=0 (*) 2N3790 2N3792 2N3789 2N3791 IC=-200 mA, IB=0 (*) 2N3790 2N3792 2N3789 VCE=-30 V, IB=0 2N3791 2N3790 VCE=-40 V, IB=0 2N3792 2N3789 VCE=-80 V, VEB=1.5 V 2N3791 2N3790 VCE=-100 V, VEB=1.5 V 2N3792 VCE=-60 V, VEB=1.5 V 2N3789 TC = 150°C 2N3791 VCE=-80 V, VEB=1.5 V 2N3790 TC = 150°C 2N3792 2N3713 2N3714 VBE=-7 V, IC=0 2N3715 2N3716 2N3789 2N3790 IC=-1 A, VCE=-2 V 2N3791 2N3792 2N3789 2N3790 IC=-3 A, VCE=-2 V 2N3791 2N3792 2N3789 2N3790 IC=-10 A, VCE=-4 V 2N3791 2N3792 2N3791 IC=-5 A, IB=-0.5 A 2N3792 COMSET SEMICONDUCTORS Min Typ Max -60 - - Unit V -80 - - -60 - - -80 - - - - -0.7 - - -0.7 - - -1 - - -1 - - -10 - - -10 - - -5 25 - 90 50 - 150 15 - - 30 - - 5 - - - - -1 V mA mA mA - 2|4 V PNP 2N3789 – 2N3790 – 2N3791 – 2N3792 ELETRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VBE(SAT) VBE Ratings Test Condition(s) Base-Emitter saturation Voltage (*) (**) IC=-5 A, IB=-0.5 A Base-Emitter Voltage (*) IC=-3 A, VCE=-2V (**) VCE=-10 V, IC=-0.5 A f=1.0 kHz hfe Small Signal Current Gain VCE=-10 V, IC=-0.5 A f=1.0 MHz 2N3789 2N3790 2N3791 2N3792 2N3789 2N3790 2N3789 2N3790 2N3791 2N3792 2N3789 2N3790 2N3791 2N3792 Min Typ Max - - -2 - - -1.5 - - -1.5 V 25 - 250 - 4 - 4 - V (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (**) These parameters are measured with voltage sensing contacts separate from the current carrying contacts 05/11/2012 COMSET SEMICONDUCTORS Unit 3|4 PNP 2N3789 – 2N3790 – 2N3791 – 2N3792 MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) min A B C D F G N P R U V 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 Pin 1 : Pin 2 : Case : max 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Base Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 05/11/2012 [email protected] COMSET SEMICONDUCTORS 4|4