SEMICONDUCTORS NPN TIP41-A-B-C SILICON POWER TRANSISTORS They are epitaxial-base NPN power transistors mounted in jedec TO-220 plastic package. They are intended for use in medium power linear and switching applications. PNP complements are TIP42-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC ICM Value TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C 40 60 80 100 40 60 80 100 Unit V V 5 V Collector Current TIP41 TIP41A TIP41B TIP41C 6 A Collector Peak Current TIP41 TIP41A TIP41B TIP41C 10 A 04/10/2012 COMSET SEMICONDUCTORS 1|4 SEMICONDUCTORS NPN TIP41-A-B-C ABSOLUTE MAXIMUM RATINGS Symbol Ratings Base Current IB @ Tc < 25° PC Power Dissipation @ Ta < 25° Junction Temperature TJ Storage Temperature range Ts TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C Value Unit 2 A 65 Watts 2 150 °C -65 to +150 THERMAL CHARACTERISTICS Symbol Ratings RthJ-MB From junction to mounting base RthJ-A From junction to ambient in free air 04/10/2012 TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C COMSET SEMICONDUCTORS Value Unit 1.92 °C/W 62.5 °C/W 2|4 SEMICONDUCTORS NPN TIP41-A-B-C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) ICES Collector Cutoff Current ICEO Collector Cutoff Current IE= 0, VCE = VCEO IB= 0, VCE = 30V IB= 0, VCE = 60V IEBO Emitter Cutoff Current VEB= 5 V, IC= 0 VCEO Collector-Emitter Breakdown Voltage (*) IC= 30 mA, IB= 0 VCE(SAT) Collector-Emitter saturation Voltage (*) IC= 6 A, IB= 600 mA VBE(on) Base-Emitter Voltage (*) IC= 6 A, VCE= 4 V VCE= 4 V, IC= 0.3 A hFE DC Current Gain (*) VCE= 4 V, IC= 3 A hfe Small Signal Current Gain VCE= 10 V, IC= 0.5 A, f= 1kHz fT Current Gain-Bandwidth Product VCE= 10 V, IC= 0.5 A TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C Min Typ Max Unit - - 0.4 Ma - - 0.7 - - 0.7 - - 1 mA 40 60 80 100 - - V - - 1.5 V - - 2 V 30 - - mA 15 - 75 20 - - - 3 - - MHz (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 04/10/2012 COMSET SEMICONDUCTORS 3|4 SEMICONDUCTORS NPN TIP41-A-B-C MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) A B C D E F G H L M N P R S T U Min. Max. 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 Pin 1 : Pin 2 : Pin 3 : Case : Base Collector Emitter Collector September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 04/10/2012 [email protected] COMSET SEMICONDUCTORS 4|4