NPN 2N3439 – 2N3440 HIGH VOLTAGE TRANSISTOR C The 2N3439 and 2N3440 are high voltage silicon epitaxial transistors mounted in TO-39 metal package. They are intended for use in power amplifier, in consumer and industrial line-operated applications. These devices are particularity suited as drives in high voltage low current inverters, switching and series regulators. Compliance to RoHS. B E ABSOLUTE MAXIMUM RATINGS Symbol Value Ratings 2N3439 2N3440 Unit IB = 0 350 250 V VCBO VEBO IC IB Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current IE = 0 IC = 0 450 300 V V A mA PD Total Power Dissipation Tamb = 25° Tcase = 25° TJ TStg Junction Temperature Storage Temperature range VCEO 7 1 500 1 10 200 -65 to +200 W °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-a Thermal Resistance, Junction to ambient 175 °C/W RthJ-c Thermal Resistance, Junction to case 35 °C/W COMSET SEMICONDUCTORS 1/3 NPN 2N3439 – 2N3440 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified Symbol ICBO ICEO ICEX IEBO VCEO Ratings Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-emitter Breakdown Voltage Test Condition(s) Typ Max Unit - - 20 µA - - 20 50 µA - - 500 µA - - 20 µA 350 250 30 - - 40 - 160 IC = 50 mA, IB = 4 mA - - 0.5 V IC = 50 mA, IB = 4 mA - - 1.3 V 15 - - MHz - - 10 pF VCB = 360 V, IE = 0 VCB = 250 V, IE = 0 VCE = 300 V, IB = 0 VCE = 200 V, IB = 0 VCE = 450 V, VBE = -1.5 V VCE = 300 V, VBE = -1.5 V VBE = 6 V, IC = 0 IC = 50 mA, IB = 0 IC = 2 mA, VCE = 10 V hFE VCE(SAT) VBE(SAT) DC Current Gain Collector-Emitter saturation Voltage Base-Emitter saturation Voltage IC = 20 mA, VCE = 10 V fT Transition frequency IC = 10 mA, VCB = 10 V f = 5 MHz Cob Output Capacitance VCB = 10 V, f = 1MHz 08/08/2012 2N3439 2N3440 2N3439 2N3440 2N3439 2N3440 2N3439 2N3440 2N3439 2N3440 2N3439 2N3439 2N3440 COMSET SEMICONDUCTORS Min V - 2/3 NPN 2N3439 – 2N3440 MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min max A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.70 - L 42° 48° Pin 1 : Emitter Pin 2 : Base Pin 3 : Collector Case : Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 08/08/2012 [email protected] COMSET SEMICONDUCTORS 3/3