NPN BD136 – BD138 – BD140 SILICON PLANAR EPITAXIAL POWER TRANSISTORS. The BD136-BD138-BD140 are PNP Transistors They are recommended for driver stages in hi-fi amplifiers and television circuits. They are mounted in Jedec TO-126 plastic package. NPN complements are BD135-BD137-BD139. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings -VCBO Collector-Base Voltage (IE= 0) -VCEO Collector-Emitter Voltage (IB= 0) -VCER Collector-Emitter Voltage (RBE= 1 kΩ) -VEBO Emitter-Base Voltage (IE= 0) Value BD135 BD137 BD139 BD135 BD137 BD139 BD135 BD137 BD139 -IC -ICM -IC Collector Current -IB PT TJ TStg Base current Total power Dissipation Junction Temperature Storage Temperature @ Tmb = 70°C Unit 45 60 100 45 60 80 45 60 100 5 1.5 2 0.5 8 150 -65 to +150 A Watts °C °C Value Unit 10 100 K/W K/W V V V V A THERMAL CHARACTERISTICS Symbol RthJ-mb RthJ-a Ratings Thermal Resistance, Junction to mouting base Thermal Resistance, Junction to ambient in free air 15/10/2012 COMSET SEMICONDUCTORS 1|3 NPN BD136 – BD138 – BD140 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0, -VCB= 30 V -ICBO Collector cut-off current IE=0, -VCB = 30V Tj= 125°C -IEBO Emitter cut-offcurrent BD135 BD137 BD139 BD135 BD137 BD139 IC=0, -VEB=5 V BD135 BD137 BD139 -VCEO(SUS) Collector-Emitter sustaning Voltage (*) IB=0, -IC=30 mA -VCE(SAT) Collector-Emitter saturation Voltage (*) -IC=0.5 A, -IB=50 mA hFE DC Current Gain (*) -VBE Base-Emitter Voltage(*) fT Transition frequency -VCE=2 V, -IC=5 mA BDxxx -VCE=2 V BDxxx -10 -IC=150 mA BDxxx -16 -VCE=2 V, -IC=500 mA -VCE=2 V, -IC=500 mA -VCE=5 V, -IC=50 mA f= 35 MHz Min Typ Max Unit 45 60 80 - 0,1 0,1 0,1 10 10 10 10 - - - 0,5 V 25 40 63 100 25 - - 250 160 250 1 V - 75 - MHz µA µA V (*) Measured under pulse conditions :tP <300µs, δ <2%. 15/10/2012 COMSET SEMICONDUCTORS 2|3 NPN BD136 – BD138 – BD140 MECHANICAL DATA CASE TO-126 DIMENSIONS A B C D E F G L M N P S min 7.4 10.5 2.4 0.7 max 7.8 10.8 2.7 0.9 2.25 typ. 0.49 0.75 4.4 typ. 15.7 typ. 1.27 typ. 3.75 typ. 3.0 3.2 2.54 typ. Pin 1 : Pin 2 : Pin 3 : Emitter Collector Base Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 15/10/2012 [email protected] COMSET SEMICONDUCTORS 3|3