NPN 2N2484 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2484 are a silicon planar epitaxial NPN transistors mounted in TO-18 metal package. They are intended for use in high-performance, low-noise amplifier circuits from audio to highfrequency. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC PD Ratings Value Unit V V V mA @ Tamb = 25° 60 60 6 50 0.36 @ Tcase= 25° 1.2 Watts @ Tcase<100° 0.68 200 °C -65 to +200 °C Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation TJ Junction Temperature TStg Storage Temperature range THERMAL CHARACTERISTICS Symbol Ratings RthJ-a Thermal Resistance, Junction-ambient 486 °C/ W RthJ-c Thermal Resistance, Junction-case 146 °C/ W COMSET SEMICONDUCTORS 1/3 NPN 2N2484 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) ICBO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage VCEO (*) VCBO VEBO hFE (*) DC Current Gain VBE Collector-Emitter saturation Voltage Base-Emitter Voltage fT Transition frequency VCE(SAT) hfe Small signal current gain CCBO Collector-Base Capacitance CEBO Emitter-Base Capacitance NF Noise figure Min Typ Max Unit VCB=45 V, IE=0 VCB=45 V, IE=0 Tj=150°C VBE=5.0 V, IC=0 - - 10 nA - - 10 µA - - 10 nA IC=10 mA, IB=0 60 - - V IC=10 µA, IE=0 60 - - V IE=10 µA, IC=0 6 - - V IC=1 µA, VCE =5 V IC=10 µA, VCE =5 V IC=100 µA, VCE =5 V IC=500 µA, VCE =5 V IC=1mA, VCE =5 V IC=10 mA, VCE =5 V IC=10 µA, VCE =5 V Tamb = -55° 30 100 175 200 250 - 200 290 375 430 450 430 500 800 20 - - IC=1 mA, IB=0.1 mA - 0.2 0.35 0.5 0.57 0.7 15 20 - 60 78 - 150 400 900 - - 3.5 6 pF - 3.5 6 pF - 4 1.8 0.6 10 3 2 dB - 1.8 3 IC=100 µA, VCE =5 V IC=50 µA, VCE= 5 V f= 5 MHz IC=500 µA, VCE= 5 V f= 30 MHz IC=1 mA, VCE=5.0 V f= 1 KHz IE= 0 ,VCB=5 V f = 1MHz IC= 0 ,VEB=0.5 V f = 1MHz f = 100 Hz IC= 0 f = 1 kHz VCE=5.0 V f = 10 kHz Rg = 10 kΩ f = 10 to 10000 Hz - V MHz (*) Pulse conditions : tp < 300 µs, δ =1% 15/10/2012 COMSET SEMICONDUCTORS 2/3 NPN 2N2484 MECHANICAL DATA CASE TO-18 DIMENSIONS (mm) min A B C D E F G H I L max 12.7 0.9 2.54 45° Pin 1 : Pin 2 : Pin 3 : Case : 0.49 5.3 4.9 5.8 1.2 1.16 - emitter base Collector Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 15/10/2012 [email protected] COMSET SEMICONDUCTORS 3/3