PNP 2N2905 – 2N2905A SILICON PLANAR EPITAXIAL TRANSISTOR The 2N2905 and 2N2905A are PNP transistors mounted in TO-39 metal case . They are intended for high speed switching and general purpose applications. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current PD Total Power Dissipation @ Tamb = 25° PD Total Power Dissipation @ Tcase= 25° TJ Junction Temperature TStg Storage Temperature range Value 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 -60 -40 -60 -60 -5 -5 -600 Unit V V V mA 0.6 Watts 3 200 °C -65 to +200 °C Value Unit 58.3 °C/W 292 °C/W THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to ambient in free 2N2905A air 2N2905 2N2905A Thermal Resistance, Junction to case 2N2905 COMSET SEMICONDUCTORS 1/3 PNP 2N2905 – 2N2905A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICEX VCEO VCBO VEBO hFE VCE(SAT) VBE(SAT) fT td tr CCBO CEBO Ratings Test Condition(s) 2N2905A VCB=-50 V IE=0 2N2905 Collector Cutoff Current 2N2905A VCB=-50 V, IE=0 Tj=150°C 2N2905 2N2905A VCE=-30 V Collector Cutoff Current VBE=0.5V 2N2905 2N2905A Collector Emitter IC=-10 mA Breakdown Voltage IB=0 2N2905 2N2905A Collector Base IC=-10 µA Breakdown Voltage IE=0 2N2905 2N2905A Emitter Base Breakdown IE=-10 µA Voltage IC=0 2N2905 2N2905A IC=-0.1 mA VCE=-10 V 2N2905 2N2905A IC=-1 mA VCE=-10 V 2N2905 2N2905A IC=-10 mA DC Current Gain (*) VCE=-10 V 2N2905 IC=-150 mA 2N2905A VCE=-10 V 2N2905 2N2905A IC=-500 mA VCE=-10 V 2N2905 2N2905A IC=-150 mA IB=-15 mA 2N2905 Collector-Emitter saturation Voltage (*) 2N2905A IC=-500 mA IB=-50 mA 2N2905 2N2905A IC=-150 mA IB=-15 mA 2N2905 Base-Emitter saturation Voltage (*) 2N2905A IC=-500 mA IB=-50 mA 2N2905 IC =-50 mA 2N2905A Transition frequency VCE =-20 V 2N2905 f = 100MHz Delay time IC=-150 mA ,IB =-15 mA -VCC=-30 V Rise time Collector-Base IE= Ie = 0 ,VCB=-10 V 2N2905A f = 100kHz capacitance 2N2905 IC= Ic = 0 ,VEB=-2 V 2N2905A Emitter-Base capacitance f = 100kHz 2N2905 Min Typ Max Unit - - -10 -20 -10 -20 - - -50 nA -60 -40 - - V -60 - - V -5 - - V 75 35 100 50 100 75 100 40 50 30 - 300 120 - - - - -0.4 - - -1.6 nA µA V - - -1.3 - - -2.6 200 - - MHz - - 10 40 ns - - 8 pF - - 30 pF (*) Pulse conditions : tp < 300 µs, δ =2% 16/10/2012 COMSET SEMICONDUCTORS 2/3 PNP 2N2905 – 2N2905A MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min max A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.70 - L 42° 48° Pin 1 : Emitter Pin 2 : Base Pin 3 : Collector Case : Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 16/10/2012 [email protected] COMSET SEMICONDUCTORS 3/3