COMSET 2N2905_12

PNP 2N2905 – 2N2905A
SILICON PLANAR EPITAXIAL TRANSISTOR
The 2N2905 and 2N2905A are PNP transistors mounted in TO-39 metal case .
They are intended for high speed switching and general purpose applications.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
PD
Total Power Dissipation
@ Tamb = 25°
PD
Total Power Dissipation
@ Tcase= 25°
TJ
Junction Temperature
TStg
Storage Temperature range
Value
2N2905A
2N2905
2N2905A
2N2905
2N2905A
2N2905
2N2905A
2N2905
2N2905A
2N2905
2N2905A
2N2905
2N2905A
2N2905
2N2905A
2N2905
-60
-40
-60
-60
-5
-5
-600
Unit
V
V
V
mA
0.6
Watts
3
200
°C
-65 to +200
°C
Value
Unit
58.3
°C/W
292
°C/W
THERMAL CHARACTERISTICS
Symbol
RthJ-a
RthJ-c
Ratings
Thermal Resistance, Junction to ambient in free 2N2905A
air
2N2905
2N2905A
Thermal Resistance, Junction to case
2N2905
COMSET SEMICONDUCTORS
1/3
PNP 2N2905 – 2N2905A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO
ICEX
VCEO
VCBO
VEBO
hFE
VCE(SAT)
VBE(SAT)
fT
td
tr
CCBO
CEBO
Ratings
Test Condition(s)
2N2905A
VCB=-50 V
IE=0
2N2905
Collector Cutoff Current
2N2905A
VCB=-50 V, IE=0
Tj=150°C
2N2905
2N2905A
VCE=-30 V
Collector Cutoff Current
VBE=0.5V
2N2905
2N2905A
Collector Emitter
IC=-10 mA
Breakdown Voltage
IB=0
2N2905
2N2905A
Collector Base
IC=-10 µA
Breakdown Voltage
IE=0
2N2905
2N2905A
Emitter Base Breakdown IE=-10 µA
Voltage
IC=0
2N2905
2N2905A
IC=-0.1 mA
VCE=-10 V
2N2905
2N2905A
IC=-1 mA
VCE=-10 V
2N2905
2N2905A
IC=-10 mA
DC Current Gain (*)
VCE=-10 V
2N2905
IC=-150 mA
2N2905A
VCE=-10 V
2N2905
2N2905A
IC=-500 mA
VCE=-10 V
2N2905
2N2905A
IC=-150 mA
IB=-15 mA
2N2905
Collector-Emitter
saturation Voltage (*)
2N2905A
IC=-500 mA
IB=-50 mA
2N2905
2N2905A
IC=-150 mA
IB=-15 mA
2N2905
Base-Emitter saturation
Voltage (*)
2N2905A
IC=-500 mA
IB=-50 mA
2N2905
IC =-50 mA
2N2905A
Transition frequency
VCE =-20 V
2N2905
f = 100MHz
Delay time
IC=-150 mA ,IB =-15 mA
-VCC=-30 V
Rise time
Collector-Base
IE= Ie = 0 ,VCB=-10 V 2N2905A
f = 100kHz
capacitance
2N2905
IC= Ic = 0 ,VEB=-2 V 2N2905A
Emitter-Base capacitance
f = 100kHz
2N2905
Min
Typ
Max
Unit
-
-
-10
-20
-10
-20
-
-
-50
nA
-60
-40
-
-
V
-60
-
-
V
-5
-
-
V
75
35
100
50
100
75
100
40
50
30
-
300
120
-
-
-
-
-0.4
-
-
-1.6
nA
µA
V
-
-
-1.3
-
-
-2.6
200
-
-
MHz
-
-
10
40
ns
-
-
8
pF
-
-
30
pF
(*) Pulse conditions : tp < 300 µs, δ =2%
16/10/2012
COMSET SEMICONDUCTORS
2/3
PNP 2N2905 – 2N2905A
MECHANICAL DATA CASE TO-39
DIMENSIONS (mm)
min
max
A
8.50
9.39
B
7.74
8.50
C
6.09
6.60
D
0.40
0.53
E
-
0.88
F
2.41
2.66
G
4.82
5.33
H
0.71
0.86
J
0.73
1.02
K
12.70
-
L
42°
48°
Pin 1 :
Emitter
Pin 2 :
Base
Pin 3 :
Collector
Case :
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
16/10/2012
[email protected]
COMSET SEMICONDUCTORS
3/3