PNP 2N5322 – 2N5323 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N5322 and 2N5323 are PNP transistors mounted in TO-39 metal case . They are especially intended for high-voltage medium power applications in industrial and commercial equipements. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage (IB = 0) VCBO Collector-Base Voltage (IE = 0) VCEV Collector-Emitter Voltage (VBE = 1.5V) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current IB Base Current @ Tamb = 25° PD Total Power Dissipation @ Tcase= 25° TJ Junction Temperature TStg Storage Temperature range Value 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 -75 -50 -100 -75 -100 -75 -6 -5 Unit V V V V -2 A -1 A 1 W 10 -65 to +200 °C -65 to +200 °C Value Unit THERMAL CHARACTERISTICS Symbol Ratings RthJ-a Thermal Resistance, Junction to ambient 175 °C/W RthJ-c Thermal Resistance, Junction to case 17.5 °C/W COMSET SEMICONDUCTORS 1/3 PNP 2N5322 – 2N5323 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCEO VCEV VEBO hFE (1) VCE(SAT) (1) VBE (1) fT ton toff Collector Emitter Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage VCB = -80 V, IE =0 VCB = -60 V, IE =0 VEB = -5 V, IC =0 VEB = -4 V, IC =0 IC = -10 mA, IB =0 IC = -100 µA VBE = 1.5V IE = -100 µA IC =0 IC = -500 mA VCE = -4 V DC Current Gain IC = -1 A VCE = -2 V Collector-Emitter saturation IC = -500 mA Voltage IB = -50 mA IC = -500 mA Base-Emitter Voltage VCE = -4 V IC = -50 mA VCE = -4 V Transition frequency f = 10 MHz IC = -500 mA Turn-on Time VCC = -30 V IB1 = -50 mA IC = 500 mA Turn-off Time VCC = 30 V IB1 = -IB2 = -50 mA Min Typ Max 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 -75 -50 -100 -75 -6 -5 30 40 -0.1 -0.5 - -0.5 -5 130 250 2N5322 10 - - 2N5322 2N5323 2N5322 2N5323 2N5322 - - -0.7 -1.2 -1.1 -1.4 50 - - MHz - - 100 ns - - 1000 ns 2N5323 2N5322 Unit µA µA V V V - V V 2N5323 2N5322 2N5323 (1) Pulse conditions : tp < 300 µs, δ =1% 17/10/2012 COMSET SEMICONDUCTORS 2/3 PNP 2N5322 – 2N5323 MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min max A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.70 - L 42° 48° Pin 1 : Emitter Pin 2 : Base Pin 3 : Collector Case : Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 17/10/2012 [email protected] COMSET SEMICONDUCTORS 3/3