BDX18 – BDX18N PNP SILICON TRANSISTOR EPITAXIAL BASE LF Large Signal Power Amplification High Current Switching Thermal Fatigue Inspection Compliance to RoHS Applications : • • • • Series and shunt regulators High Fidelity Amplifiers Power-switching circuits Solenoid drivers ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCER Collector-Emitter Voltage VEBO Collector-Emitter Voltage VCBO Emitter-Base Voltage VCEX Collector-Emitter Voltage IC Collector Current IB Base Current PT TJ Power Dissipation Junction Temperature TS Storage Temperature 05/10/2012 RBE=100Ω VBE=+1.5 V BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N @ TC = 25° COMSET SEMICONDUCTORS Value Unit -60 V -70 -65 V -7 V -100 -70 -90 -70 V V -15 A -7 A 117 W -65 to +200 °C 1|3 BDX18 – BDX18N THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Value Unit 1.5 °C/W Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) VCEX(SUS) VCER(SUS) ICEX IEBO VBE VCE(SAT) Ratings Test Condition(s) Collector-Emitter Breakdown Voltage (*) Collector-Emitter Breakdown Voltage (*) Collector-Emitter Breakdown Voltage (*) Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Base-Emitter Voltage (*) Collector-Emitter Saturation Voltage IC=200 mA IB=0 IC=-100 mA VBE=1.5 V IC=-200 mA RBE=100 Ω VCE=-90 V VBE=1.5 V VCE=-60 V, VBE=1.5 V TCASE=150°C VCE=-70 V VBE=1.5 V VCE=-60 V, VBE=1.5 V TCASE=150°C VEB=-7 V IC=-4.0 A, VCE=-4.0V IC=-4.0 A, IB=-0.4V IC =-1A, VCE=-10 V f=1 MHz fT Transition Frequency h21E Static Forward Current VCE=-4.0 V, IC=-4.0 A Transfer Ratio (*) BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N Min Typ Max Unit V -60 -60 -90 -70 -70 -65 - - - - - - -5 V V BDX18 -10 mA - - -5 - - -10 - - -5 mA - - -1.8 V - - -1.1 V - 4 - MHz 20 - 70 - BDX18N BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit 05/10/2012 COMSET SEMICONDUCTORS 2|3 BDX18 – BDX18N MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) A B C D F G N P R U V min max 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Pin 1 : Pin 2 : Case : Base Emitter Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 05/10/2012 [email protected] COMSET SEMICONDUCTORS 3|3