BD181 – BD182 – BD183 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS BD181, BD182 and BD183 are silicon NPN transistors intended for a wide variety of high power applications. Typical applications include power switching circuits, audio amplifiers, solenoid drivers, and series and shunt regulators. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector-Base Voltage VCEO Collector-EmitterVoltage VCER Collector-EmitterVoltage RBE=100 Ω VCEX Collector-EmitterVoltage VBE=-1.5 V VEBO IC IB PT PTOT Emitter-Base Voltage Collector Current Base Current Power Dissipation Power dissipation Junction Temperature Storage Temperature TJ Ts @ TC < 25° Value BD181 BD182 BD183 BD181 BD182 BD183 BD181 BD182 BD183 BD181 BD182 BD183 55 70 85 45 60 80 55 70 85 55 70 85 7.0 15 7.0 150 117 200 -65 to +200 Unit V V V V V A A W W °C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case 18/10/2012 COMSET SEMICONDUCTORS Value Unit 1.5 °C/W 1/3 BD181 – BD182 – BD183 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol IEBO ICBO Ratings Test Condition(s) Emitter-Base Cutoff Current VEB= 7 V, IC=0 Collector-Base Cutoff Current VCB=45 V Tj=200°C VCB=60 V Tj=200°C VCB=80 V Tj=200°C VCEO(BR) Collector-Emitter Breakdown IC=200 mA, IB=0 Voltage (*) VCE(SAT) Collector-Emitter saturation Voltage (*) VBR(CER) Collector-Emitter Breakdown IC=200 mA Voltage (*) RBE=100 Ω fhfe Collector-Emitter Breakdown VCE=4.0 V, IC=3.0 A Voltage (*) hFE Static forward current transfer ratio (*) IC=3 A, IB=0.3 A IC=4 A, IB=0.4 A IC=3 A, IB=0.3 A VCE=4.0 V, IC=3.0 A VCE=4.0 V, IC=4.0 A VCE=4.0 V, IC=3.0 A Min Typ Max Unit BD181 BD182 BD183 - - 5.0 A BD181 - - 2.0 BD182 - - 5.0 BD183 - - 5.0 BD181 BD182 BD183 BD181 BD182 BD183 BD181 BD182 BD183 BD181 BD182 BD183 BD181 BD182 BD183 45 60 80 55 70 85 - 1.0 1.0 1.0 - V 15 - - kHz 20 20 20 - 70 70 70 - mA V V (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 18/10/2012 COMSET SEMICONDUCTORS 2/3 BD181 – BD182 – BD183 MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) min A B C D F G N P R U V Pin 1 : Pin 2 : Case : 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 max 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Base Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 18/10/2012 [email protected] COMSET SEMICONDUCTORS 3/3