COMSET BU508DF_12

SEMICONDUCTORS
NPN BU508DF
SILICON DIFFUSED POWER TRANSISTOR
The BU508DF is a NPN epitaxial-base transistor in TO3PFa package with integrated
efficiency diode.
It is intended for high voltage, high-speed.
Primarily for use in horizontal deflection circuits of colour television receivers.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PT
tJ
ts
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current Peak
Base Current
Base Current Peak
Total Dissipation
@ Tmb < 25°
Junction Temperature
Storage Temperature range
Value
Unit
1500
700
5
8
15
4
6
34
150
-65 to +150
V
V
V
A
A
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
RthJC
Ratings
Junction To Heatsink
Junction To Heatsink
Junction Ambient
15/10/2012
Conditions
Without Heatsink Compound
With Heatsink Compound
In Free Air
COMSET SEMICONDUCTORS
Value
Typ.
35
Max
3.7
2.8
-
Unit
K/W
1|3
SEMICONDUCTORS
NPN BU508DF
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO
Collector-Emitter
Breakdown Voltage
IC= 100 mA, IB=0
L= 25mH
ICES
Collector Cutoff Current
VBE =0, VCE = 1500 V
IEBO
VCE(SAT)
VBE(SAT)
Emitter Cutoff Current
Collector-Emitter
saturation Voltage
Base-Emitter saturation
Voltage
VBE =0, VCE = 1500 V
Tj =125°C
VEB= 5 V, IC=0
IC= 4.5 A, IB= 1.6 A
Typ
Max
Unit
700
-
-
V
-
-
1
-
-
2
-
-
300
-
-
1
mA
mA
V
IC= 4.5 A, IB= 2 A
-
-
1.1
-
1.6
2
V
10
3
-
7
30
-
A
MHz
VF
Diode Forwardvoltage
IF= 4.5 A
hFE
COB
fT
DC Current Gain
Output Capacitance
Transition Frequency
IC= 500 mA, VCE = 5 V
VCB = 10 V, IE=0, f= 1MHz
VCE= 5 V, IC= 100 mA
15/10/2012
Min
COMSET SEMICONDUCTORS
2|3
SEMICONDUCTORS
NPN BU508DF
MECHANICAL DATA CASE TO3PFa
Pin 1 :
Base
Pin 2 :
Collector
Case :
Emitter
Case :
Isolated
1 2 3
Revised October 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
15/10/2012
[email protected]
COMSET SEMICONDUCTORS
3|3