PNP BDT82 – BDT84 – BDT86 – BDT88 SILICON POWER TRANSISTORS The BDT82 – BDT84 – BDT86 – BDT88 are epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 – BDT83 – BDT85 – BDT87. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 Unit -60 -80 -100 -120 -60 -80 -100 -120 -7 -15 -20 -4 125 V A A A W VCEO Collector-Emitter Voltage -IB = 0 VCBO Collector-Base Voltage -IE = 0 VEBO IC ICM IB Pt Emitter-Base Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation -IC = 0 TJ Junction Temperature 150 °C TStg Storage Temperature -65 to +150 °C Value Unit 70 1 K/W K/W @ TC = 25° V V THERMAL CHARACTERISTICS Symbol RthJa RthJmb Ratings Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Mounting Base 09/11/2012 COMSET SEMICONDUCTORS 1|4 PNP BDT82 – BDT84 – BDT86 – BDT88 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) ICB0 Collector Cutoff Current ICES Collector Cutoff Current IEBO Emitter Cutoff Current IE=0A, VCB = -60 V IE=0A, VCB = -80 V IE=0A, VCB = -100 V IE=0A, VCB = -120 V VBE=0, VCE = -60V VBE=0, VCE = -80V VBE=0, VCE = -100V VBE=0, VCE = -120V VEB= -7 V IC=0 IC= -50mA VCE= -10V hFE DC Current Gain (*) IC= -5A VCE= -4V IC= -5A IB= -0.5A VCE(SAT) Collector-Emitter Saturation Voltage (*) IC= -5A IB= -0.5A VBE Base-Emitter Voltage (*) 09/11/2012 IC= -7A IB= -0.7A COMSET SEMICONDUCTORS BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 BDT82 BDT84 BDT86 BDT88 Min Typ Max Unit - - -0.2 mA - - -1 mA - - -0.1 mA 40 - - 40 - - - - -1 V - - -1.6 - - -1.5 2|4 V PNP BDT82 – BDT84 – BDT86 – BDT88 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol IS/B fT ton Toff Ratings Second breakdown collector current Transition frequency Turn-on time Turn-off time Test Condition(s)Sec VCE= -50 V, tP = 100 ms VCE= -10 V, IC= -0.5 A, f=1 MHz IC= -7 A IB1 = -IB2 = -0.7 A Min Typ Max Unit -2.5 - - A - 20 - 1 2 MHz (*) Pulse Duration = 300 µs, δ <= 2% 09/11/2012 COMSET SEMICONDUCTORS 3|4 µs PNP BDT82 – BDT84 – BDT86 – BDT88 MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. A B C D E F G H L M N P R S T U Pin 1 : Pin 2 : Pin 3 : Package 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Max. 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 Base Collector Emitter Collector Revised October 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 09/11/2012 [email protected] COMSET SEMICONDUCTORS 4|4