SEMICONDUCTORS BD743 – A – B – C SILICON POWER TRANSISTORS The BD743 series are NPN power transistors in a TO-220 envelope. They are intended for use in power linear and switching application. High current capability and high power dissipation. PNP complements are BD744-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector-Base Voltage (IE=0) VCEO Collector-Emitter Voltage (IB=0) VEBO Emitter-Base Voltage (IC=0) IC Collector Current ICM Collector Peak Current IB Base Current PT Power Dissipation TJ Ts Junction Temperature Storage Temperature range 25/09/2012 Value BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C TC = 25°C TA = 25°C COMSET SEMICONDUCTORS 50 70 900 110 45 60 80 100 Unit V V 5 V 15 A 20 A 5 A 90 2 150 -65 to +150 W °C 1|4 SEMICONDUCTORS BD743 – A – B – C THERMAL CHARACTERISTICS Symbol RthJ-MB RthJ-A Ratings Value Unit 1.4 62.5 °C/W °C/W Junction To Case Thermal Resistance Junction To Free Air Thermal Resistance ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO Ratings Collector Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current VCEO 25/09/2012 Test Condition(s) VBE= 0 VCB = 50 V VBE= 0 VCB = 70 V VBE= 0 VCB = 90 V VBE= 0 VCB = 100 V VBE= 0 VCB = 50 V VBE= 0 VCB = 70 V VBE= 0 VCB = 90 V VBE= 0 VCB = 100 V IB= 0 VCE = 30 V IB= 0 VCE = 60 V Min Typ Max Unit - - 0.1 mA - - 5 mA - - 0.1 mA - - 0.5 mA 45 60 80 100 - - V BD743 BD743A TC= 25°C BD743B BD743C BD743 TC= 125°C VEB= 5 V, IC= 0 Collector-Emitter Breakdown Voltage IC= 30 mA, IB= 0 (*) BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C COMSET SEMICONDUCTORS 2|4 SEMICONDUCTORS BD743 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings IC= 5 A, IB= 500 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC= 15 A, IB=5 A IC= 5 A, VCE= 4 V VBE(on) Base-Emitter Voltage (*) IC= 15 A, VCE= 4 V IC= 1 A, VCE= 4 V hFE DC Current Gain (*) IC= 5 A, VCE= 4 V IC= 15 A, VCE= 4 V Value BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C - - Unit 1 V - - 3 - - 1 V - - 3 V 40 - - 20 - 150 5 - - - SWITCHING TIMES Symbol td tr ts tf Ratings Delay time Rise time Storage time Fall time Value Test Condition(s) IC= 5 A, Vbe= -4.2 V IB(on) = -IB(off) = 0.5 A RL = 6 Ω, tp = 20µs Unit Min Typ Max - 20 350 500 400 - ns (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 25/09/2012 COMSET SEMICONDUCTORS 3|4 SEMICONDUCTORS BD743 – A – B – C MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. A B C D E F G H L M N P R S T U 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Pin 1 : Pin 2 : Pin 3 : Package Max. 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 Base Collector Emitter Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 25/09/2012 [email protected] COMSET SEMICONDUCTORS 4|4