NSC MNLM2940-12-X

MICROCIRCUIT DATA SHEET
Original Creation Date: 07/22/96
Last Update Date: 10/08/99
Last Major Revision Date: 07/22/96
MNLM2940-12-X REV 1A1
1A LOW DROPOUT REGULATOR
General Description
The LM2940 positive voltage regulator features the ability to source 1A of ouput current
with a dropout voltage of typically 0.5V and a maximum of 1V over the entire temperature
range. Furthermore, a quiescent current reduction circuit has been included which reduces
the ground current when the differential between the input voltage and the output voltage
exceeds approximately 3V. The quiescent current with 1A of output current and an
input-output differential of 5V is therefore only 30 mA. Higher quiescent currents only
exist when the regulator is in the dropout mode (Vin - Vout < 3V).
Designed also for vehicular applications, the LM2940 and all regulated circuitry are
protected from reverse battery installations or 2-battery jumps. During line transients,
such as load dump when the input voltage can momentarily exceed the specified maximum
operating voltage, the regulator will automaically shut down to protect both the internal
circuits and the load. The LM2940 cannot be harmed by temporary mirror-image insertion.
Familiar regulator features such as short circuit and thermal overload protection are also
provided.
Industry Part Number
NS Part Numbers
LM2940
LM2940J-12/883
LM2940K-12/883
LM2940WG-12/883
Prime Die
LM2940
Controlling Document
SEE FEATURE SECTION
Processing
Subgrp Description
MIL-STD-883, Method 5004
1
2
3
4
5
6
7
8A
8B
9
10
11
Quality Conformance Inspection
MIL-STD-883, Method 5005
1
Static tests at
Static tests at
Static tests at
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
Temp ( oC)
+25
+125
-55
+25
+125
-55
+25
+125
-55
+25
+125
-55
MICROCIRCUIT DATA SHEET
MNLM2940-12-X REV 1A1
Features
-
Dropout voltage typically 0.5V @ Io = 1A
Output current in excess of 1A
Output voltage trimmed before assembly
Reverse battery protection
Internal short circuit current limit
Mirror image insertion protection
CONTROLLING DOCUMENT
LM2940J-12/883
5962-9088401QEA
LM2940K-12/883
5962-9088401MYA
LM2940WG-12/883
5962-9088401QXA
2
MICROCIRCUIT DATA SHEET
MNLM2940-12-X REV 1A1
(Absolute Maximum Ratings)
(Note 1)
Input Voltage (Survival Voltage <100ms)
60V
Internal Power Dissipation
(Note 2, 3)
Internally Limited
Maximum Junction Temperature
150 C
Storage Temperature Range
-65 C to +150 C
Lead Temperature
(Soldering, 10
Thermal Resistance
ThetaJA
T03 Pkg
T03 Pkg
CERDIP
CERDIP
CERAMIC SOIC
CERAMIC SOIC
seconds)
300 C
(Still Air)
(500LF/Min Air flow)
(Still Air)
(500LF/Min Air flow)
(Still Air)
(500LF/Min Air Flow)
40
TBD
73
37
122
77
ThetaJC
T03
CERDIP
(Note 3)
CERAMIC SOIC
(Note 3)
Package Weight
(Typcial)
T03 Pkg
CERDIP
CERAMIC SOIC
ESD Susceptibility
(Note 4)
C/W
C/W
C/W
C/W
C/W
5 C/W
3 C/W
5 C/W
TBD
1970mg
360mg
4000V
Note 1:
Note 2:
Note 3:
Note 4:
Absolute Maximum Ratings are limits beyond which damage to the device may occur.
Operating Ratings are conditions for which the device is functional, but do not
guaranteed specific performance limits. For guaranteed specifications and test
conditions see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
The package material for these devices allows much improved heat transfer over our
standard ceramic packages. In order to take full advantage of this improved heat
transfer, heat sinking must be provided between the package base (directly beneath
the die), and either metal traces on, or thermal vias through, the printed circuit
board. Without this additional heat sinking, device power dissipation must be
calculated using junction-to-ambient, rather than junction-to-case, thermal
resistance. It must not be assumed that the device leads will provide substantial
heat transfer out of the package, since the thermal resistance of the leadframe
material is very poor, relative to the material of the package base. The stated
junction-to-case thermal resistance is for the package material only, and does not
account for the additional thermal resistance between the package base and the
printed circuit board. The user must determine the value of the additional thermal
resistance and must combine this with the stated value for the package, to calculate
the total allowed power dissipation for the device.
Human body model, 100pF discharged through 1.5K Ohms
3
MICROCIRCUIT DATA SHEET
MNLM2940-12-X REV 1A1
Recommended Operating Conditions
(Note 1)
Input Voltage
26V
Operating Temperature Range
-55 C < TA < +125 C
Note 1:
Absolute Maximum Ratings are limits beyond which damage to the device may occur.
Operating Ratings are conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
4
MICROCIRCUIT DATA SHEET
MNLM2940-12-X REV 1A1
Electrical Characteristics
DC PARAMETERS:
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Vin = 17V, Io = 1A, Cout = 22uF
SYMBOL
Vout
PARAMETER
Output Voltage
CONDITIONS
NOTES
Vin = 17V, Io = 5mA
Vin = 13.6V, Io = 5mA
Vin = 14V, Io = 5mA
Vin = 26V, Io = 5mA
Vin = 17V, Io = 1A
Vin = 13.6V, Io = 1A
Vin = 13.6V, Io = 50mA
Vin = 17V, Io = 50mA
Iq
Reverse Polarity
Input Voltage DC
Ro = 100 Ohms
Quiescent Current
Vin = 17V, Io = 5mA
1
Vin = 14V, Io = 5mA
Vin = 26V, Io = 5mA
Vin = 17V, Io = 1A
Vrline
Vrload
Line Regulation
Load Regulation
14V < Vin < 26V, Io = 5mA
Vin = 17V, 50mA < Io < 1A
5
PINNAME
MAX
11.64
12.36
V
1
11.40
12.60
V
2, 3
11.64
12.36
V
1
11.40
12.60
V
2, 3
11.64
12.36
V
1
11.40
12.60
V
2, 3
11.64
12.36
V
1
11.40
12.60
V
2, 3
11.64
12.36
V
1
11.40
12.60
V
2, 3
11.64
12.36
V
1
11.40
12.60
V
2, 3
11.64
12.36
V
1
11.40
12.60
V
2, 3
11.64
12.36
V
1
11.40
12.60
V
2, 3
V
1, 2,
3
-15
UNIT
SUBGROUPS
MIN
0
15
mA
1
0
20
mA
2, 3
0
15
mA
1
0
20
mA
2, 3
0
15
mA
1
0
20
mA
2, 3
0
50
mA
1
0
60
mA
2, 3
-75
75
mV
1
-120
120
mV
2, 3
-120
120
mV
1
-190
190
mV
2, 3
MICROCIRCUIT DATA SHEET
MNLM2940-12-X REV 1A1
Electrical Characteristics
DC PARAMETERS:(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Vin = 17V, Io = 1A, Cout = 22uF
SYMBOL
Vdo
PARAMETER
Dropout Voltage
CONDITIONS
NOTES
Io = 1A
Io = 100mA
Isc
Short Circuit
Current
Vin = 17V
PINNAME
MIN
MAX
UNIT
SUBGROUPS
0
0.7
V
1
0
1
V
2, 3
0
200
mV
1
0
300
mV
2, 3
1.6
A
1
1.3
A
2, 3
AC PARAMETERS:
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: Vin = 17V, Io = 1A, Cout = 22uF
Max Line
Transient
Vo < 13V, Ro = 100 Ohms, T = 20ms
1
40
V
7, 8A,
8B
Reverse Polarity
Input Voltage
Transient
T = 20ms, Ro = 100 Ohms
1
-45
V
7, 8A,
8B
No
Output Noise
Voltage
Vin = 17V, Io = 5mA, 10Hz = 100KHz
1
0
Zo
Output Impedance
Vin = 17V, Io = 100mA DC and 20mA AC,
fo = 120Hz
1
RR
Ripple Rejection
Vin = 17V, 1Vrms, f = 1KHz, Io = 5mA
1
1
Note 1:
Functional test only.
6
1000
uVrms 4, 5,
6
1
Ohm
4, 5,
6
52
dB
4
46
dB
5, 6
MICROCIRCUIT DATA SHEET
MNLM2940-12-X REV 1A1
Graphics and Diagrams
GRAPHICS#
DESCRIPTION
05826HRA2
METAL CAN (KA), TO-3, 2LD, LOW PROFILE (B/I CKT)
06332HRA2
CERDIP (J), 16 LEAD
06351HRA1
CERPACK (W), 16 LEAD (B/I CKT)
J16ARL
CERDIP (J), 16 LEAD (P/P DWG)
K02CRE
METAL CAN (KA), TO-3, 2LD, LOW PROFILE (P/P DWG)
P000137A
METAL CAN (KA), TO-3, 2LD, LOW PROFILE (PINOUT)
P000159A
CERDIP (J), 16 LEAD (PINOUT)
P000386A
CERAMIC SOIC (WG), 16 LEAD (PINOUT)
WG16ARC
CERAMIC SOIC (WG), 16 LEAD (P/P DWG)
See attached graphics following this page.
7
(B/I CKT)
OUTPUT
GROUND
(CASE)
BOTTOM
VIEW
INPUT
LM2940K-XX/883
2 - LEAD TO3
CONNECTION DIAGRAM
BOTTOM VIEW
P000137A
N
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
NC
1
16
VIN
NC
2
15
NC
VOUT
3
14
GND
NC
4
13
GND
GND
5
12
GND
NC
6
11
GND
NC
7
10
NC
NC
8
9
NC
LM2940J-XX
16 - LEAD DIP
CONNECTION DIAGRAM
TOP VIEW
P000159A
N
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
NC
1
16
VIN
NC
2
15
NC
OUT
3
14
NC
NC
4
13
NC
GND
5
12
GND
NC
6
11
GND
NC
7
10
NC
NC
8
9
NC
LM2940WG
16 - LEAD CERAMIC SOIC
CONNECTION DIAGRAM
TOP VIEW
P000386A
N
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
MICROCIRCUIT DATA SHEET
MNLM2940-12-X REV 1A1
Revision History
Rev
ECN #
Originator
Changes
0A0
M0000588 10/08/99
Rel Date
Barbara Lopez
Initial Release of: MNLM2940-12-X Rev 0A0. Added note
for power dissipation and reference to thermal
resistance for Aluminum Nitride package.
1A1
M0003226 10/08/99
Rose Malone
Update MDS: MNLM2940-12-X, Rev. 0A0 to MNLM2940-12-X,
Rev. 1A1. Moved reference to Controlling Document to
Feature Section. Added Graphic's, reference to WG Pkg
to Main Table and Absolute Section and also Package
Weight heading. Changed Vdo, Io = 100mA, Max.
condition for subgroup 1 from 150mV to 200mV and
subgroup 2 from 200mV to 300mV.
8