DTC3059 www.din-tek.jp P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.060 at VGS = - 10 V 7.6 a 0.075 at VGS = - 4.5 V 6a Qg (Typ.) 2 nC • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested RoHS COMPLIANT APPLICATIONS S D • DC/DC Converter - Load Switch - Adaptor Switch G D G D S P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 85 °C TA = 25 °C TA = 85 °C Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 85 °C TA = 25 °C TA = 85 °C ID IS PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Unit V - 7.6 a - 5.8 - 6a, b, c - 5.2b, c - 20 - 5.3 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit - 30 ± 20 - 2.1b, c 6.3 3.3 2.5b, c 1.3b, c - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. t≤5s Steady State Symbol RthJA RthJF Typical 40 15 Maximum 50 20 Unit °C/W 1 DTC3059 www.din-tek.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage V - 30 ID = - 250 µA mV/°C 5 VGS(th) VDS = VGS, ID = - 250 µA -3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 85 °C -5 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≤ - 5 V, VGS = - 10 V -1 - 20 µA A VGS = - 10 V, ID = - 7.2 A 0.055 0.060 VGS = - 4.5 V, ID = - 6.0 A 0.066 0.075 VDS = - 15 V, ID = - 7.2 A 18 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1340 VDS = - 15 V, VGS = 0 V, f = 1 MHz 215 pF 185 VDS = - 15 V, VGS = - 10 V, ID = - 7.2 A VDS = - 15 V, VGS = - 4.5 V, ID = - 7.2 A 28 42 15 23 4.5 7.2 6 12 50 75 140 210 30 45 tf 18 27 td(on) 11 17 11 17 37 56 12 18 f = 1 MHz td(on) tr td(off) tr td(off) nC VDD = - 15 V, RL = 2.6 Ω ID ≅ - 5.8 A, VGEN = - 4.5 V, Rg = 1 Ω VDD = - 15 V, RL = 2.6 Ω ID ≅ - 5.8 A, VGEN = - 10 V, Rg = 1 Ω tf 1.2 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 5.3 - 20 IS = - 5.8 A, VGS = 0 V IF = - 5.8 A, dI/dt = - 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 22 33 ns 15 25 nC 13 9 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTC3059 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 5 VGS = 10 thru 4 V TC = - 55 °C 4 I D - Drain Current (A) I D - Drain Current (A) 16 12 8 4 2 3 4 TC = 25 °C TC = 125 °C 0 1 2 1 VGS = 3 V 0 3 0 0.0 5 0.7 VDS - Drain-to-Source Voltage (V) 2.1 2.8 3.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.05 2400 VGS = 4.5 V 0.04 1800 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.4 0.03 VGS = 10 V 0.02 Ciss 1200 600 0.01 Coss Crss 0.00 0 0 4 8 12 16 20 0 6 ID - Drain Current (A) 24 30 VDS - Drain-to-Source Voltage (V) On Resistance vs. Drain Current Capacitance 10 1.6 ID = 7.2 A VDS = 15 V VGS = 10 V, ID = 6.0 A 1.4 6 VDS = 24 V 4 2 (Normalized) 8 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 18 12 1.2 VGS = 4.5 V, ID = 7.2 A 1.0 0.8 0 0 6 12 18 24 30 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 3 DTC3059 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.05 10 TJ = 150 °C 0.04 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 7.2 A TJ = 25 °C 1 TJ = 125 °C 0.03 TJ = 25 °C 0.02 0.01 0.00 0.1 0.0 0.3 0.9 0.6 1.2 0 4 VSD - Source-to-Drain Voltage (V) 8 12 16 20 VGS - Gate-to-Source Voltage (V) Forward Diode Voltage vs. Temp. On-Resistance vs. Gate-to-Source Voltage 2.4 50 2.2 40 Power (W) V GS(th) (V) 2.0 ID = 250 µA 1.8 30 20 1.6 10 1.4 1.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) Single Pulse Power 100 Limited by RDS(on)* 100 µs I D - Drain Current (A) 10 1 ms 1 10 ms TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 100 ms 1s 10 s DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 1 Time (s) Threshold Voltage 0.1 0.1 10 100 DTC3059 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 14 I D - Drain Current (A) 12 10 8 Package Limited 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 8 1.6 6 1.2 Power (W) Power (W) Current Derating* 4 2 0.8 0.4 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 DTC3059 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 80 °C/W 3. TJM - T A = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 6 1 3DFNDJH,QIRUPDWLRQ www.din-tek.jp Package outline - SOT89 D A C D1 E H E1 L B e B1 DIM e1 Millimeters Inches Min Max Min Max A 1.40 1.60 0.550 0.630 B 0.44 0.56 0.017 B1 0.36 0.48 C 0.35 D D1 DIM Millimeters Min Max Min Max E 2.29 2.60 0.090 0.102 0.022 E1 2.13 2.29 0.084 0.090 0.014 0.019 e 1.50 BSC 0.059 BSC 0.44 0.014 0.017 e1 3.00 BSC 0.118 BSC 4.40 4.60 0.173 0.181 H 3.94 4.25 0.155 0.167 1.62 1.83 0.064 0.072 L 0.89 1.20 0.035 0.047 Note: Controlling dimensions are in millimeters. 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