SUD15N06-90L N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V 15 0.090 @ VGS = 4.5 V 14 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature Pb-free Available D TO-252 G Drain Connected to Tab G D S S Top View N-Channel MOSFET Ordering Information: SUD15N06-90L SUD15N06-90L—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C) TC = 25_C TC = 100_C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle 1%) L = 0.1 mH TC = 25_C Maximum Power Dissipation TA = 25_C Operating Junction and Storage Temperature Range Symbol Limit Unit VGS 20 V 15 ID 12 IDM 30 IS 15 IAR 15 EAR A 11 mJ 37 PD W 2a TJ, Tstg −55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Junction-to-Ambient Free Air, FR4 Board Mounta RthJA 60 70 Junction-to-Case RthJC 3.3 4.0 Notes: a. 1.36 x 2.1 surface mounted on 1” x 1” FR4 Board. 1/6 www.freescale.net.cn Unit _C/W SUD15N06-90L N-Channel 60 V (D-S) 175 °C MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Max 2.0 3.0 Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, ID = 250 mA 1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage g Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C 50 On-State Drain Currentb ID(on) Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage 100 VDS = 60 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 10 A Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb rDS(on) DS( ) gfs V nA mA m 150 15 A 0.050 0.065 VGS = 10 V, ID = 10 A, TJ = 125_C 0.12 VGS = 10 V, ID = 10 A, TJ = 175_C 0.15 VGS = 4.5 V, ID = 5 A 0.065 VDS = 15 V, ID = 10 A 11 W 0.090 S Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 28 Total Gate Chargec Qg 12 Gate-Source Chargec Qgs 2 Gate-Drain Chargec Qgd 3.5 Turn-On Delay Timec td(on) 7 20 tr 8 25 15 40 7 20 Rise Timec Turn-Off Delay Timec Fall Timec td(off) 524 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 30 V,, VGS = 10 V,, ID = 15 A VDD = 30 V, RL = 2 W ID 15 A, VGEN = 10 V, Rg = 2.5 W tf 98 pF 20 nC ns Source-Drain Diode Ratings and Characteristics (TC = 25_C) Pulsed Current ISM 30 A Diode Forward Voltage VSD IF = 15 A, VGS = 0 V 0.9 1.2 V trr IF = 15 A, di/dt = 100 A/ms 29 60 ns Reverse Recovery Time Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width 300 ms, duty cycle 2%. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/6 www.freescale.net.cn SUD15N06-90L N-Channel 60 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 20 VGS = 10 thru 6 V 16 5V I D − Drain Current (A) I D − Drain Current (A) 40 30 20 4V 10 3V 12 8 TC = 125_C 4 25_C 0 0 2 4 6 8 10 0 1 VDS − Drain-to-Source Voltage (V) Transconductance 3 4 5 On-Resistance vs. Drain Current 0.10 TC = −55_C 0.08 r DS(on)− On-Resistance ( W ) 20 g fs − Transconductance (S) 2 VGS − Gate-to-Source Voltage (V) 25 25_C 15 125_C 10 5 0 VGS = 4.5 V VGS = 10 V 0.06 0.04 0.02 0.00 0 4 8 12 16 0 20 4 8 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) 800 Ciss 400 200 Coss Crss 16 20 Gate Charge 20 600 12 ID − Drain Current (A) Capacitance 1000 C − Capacitance (pF) −55_C 0 0 VDS = 30 V ID = 15 A 16 12 8 4 0 0 10 20 30 40 50 VDS − Drain-to-Source Voltage (V) 3/6 60 0 4 8 12 16 20 Qg − Total Gate Charge (nC) www.freescale.net.cn 24 SUD15N06-90L N-Channel 60 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) − On-Resiistance (Normalized) 2.0 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 VGS = 10 V ID = 10 A I S − Source Current (A) 2.5 1.5 1.0 0.5 0.0 −50 −25 0 25 50 75 100 125 TJ − Junction Temperature (_C) 4/6 150 175 TJ = 150_C 10 TJ = 25_C 1 0.0 0.3 0.6 0.9 VSD − Source-to-Drain Voltage (V) www.freescale.net.cn 1.2 SUD15N06-90L N-Channel 60 V (D-S) 175 °C MOSFET THERMAL RATINGS Drain Current vs. Case Temperature 20 Safe Operating Area 50 10 ms 100 ms 10 I D − Drain Current (A) I D − Drain Current (A) 16 12 8 *rDS(on) Limited 1 ms 1 10 ms 4 0 0 25 50 75 100 125 150 0.1 175 0.1 TC − Case Temperature (_C) 1 10 VDS − Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 100 ms dc TC = 25_C Single Pulse 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−5 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 5/6 www.freescale.net.cn 100 SUD15N06-90L N-Channel 60 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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