SHENZHENFREESCALE SUD06N10-225L

SUD06N10-255L
Automotive N-Channel
100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
100
rDS(on) (W)
ID (A)
0.200 @ VGS = 10 V
6.5
0.225 @ VGS = 4.5 V
6.0
Qg (Typ)
27
2.7
TO-252
D
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
S
SUD06N10-225L
SUD06N10-225L—E3 (lLead (Pb)-Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
" 20
Continuous Drain Current (TJ = 175_C)b
TC = 25_C
TC = 125_C
Pulsed Drain Current
3.75
IDM
8.0
IS
6.5
Avalanche Current
IAR
5.0
EAR
1.25
L = 0.1 mH
TC = 25_C
Maximum Power Dissipation
TA = 25_C
Operating Junction and Storage Temperature Range
V
6.5
ID
Continuous Source Current (Diode Conduction)
Repetitive Avalanche Energy (Duty Cycle v 1%)
Unit
A
mJ
20b
PD
W
1.5a
TJ, Tstg
−55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter
J
Junction-to-Ambient
ti t A bi ta
Junction-to-Case
Symbol
t v 10 sec
Steady State
RthJA
RthJC
Typical
Maximum
40
50
80
100
6.0
7.5
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
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SUD06N10-255L
Automotive N-Channel
100 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Typa
Symbol
Test Condition
Min
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
100
VGS(th)
VDS = VGS, ID = 250 mA
1.0
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 100 V, VGS = 0 V
1
VDS = 100 V, VGS = 0 V, TJ = 125_C
50
VDS = 100 V, VGS = 0 V, TJ = 175_C
250
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage
g Drain Current
On-State Drain Currentb
IDSS
ID(on)
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 3 A
Drain Source On-State
Drain-Source
On State Resistanceb
Forward Transconductanceb
rDS(on)
DS( )
gfs
3.0
8.0
V
nA
mA
m
A
0.160
0.200
VGS = 10 V, ID = 3 A, TJ = 125_C
0.350
VGS = 10 V, ID = 3 A, TJ = 175_C
0.450
VGS = 4.5 V, ID = 1.0 A
0.180
VDS = 15 V, ID = 3 A
8.5
W
0.225
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
17
Total Gate Chargec
Qg
2.7
Gate-Source
Chargec
Qgs
240
VGS = 0 V, VDS = 25 V, F = 1 MHz
VDS = 50 V,, VGS = 5 V,, ID = 6.5 A
42
pF
4.0
0.6
nC
Gate-Drain Chargec
Qgd
0.7
Turn-On Delay Timec
td(on)
7
11
8
12
8
12
9
14
Rise
Timec
tr
Turn-Off Delay Timec
Fall Timec
td(off)
VDD = 50 V, RL = 7.5 W
ID ^ 6.5 A, VGEN = 10 V, Rg = 2.5 W
tf
ns
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
8.0
A
Voltageb
VSD
IF = 6.5 A, VGS = 0 V
0.9
1.3
V
Source-Drain Reverse Recovery Time
trr
IF = 6.5 A, di/dt = 100 A/ms
35
60
ns
Diode Forward
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
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SUD06N10-255L
Automotive N-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
15
15
TC = −55_C
VGS = 10 thru 5 V
9
25_C
12
I D − Drain Current (A)
I D − Drain Current (A)
12
4V
6
3
9
125_C
6
3
3, 2 V
0
0
0
2
4
6
8
10
0
VDS − Drain-to-Source Voltage (V)
2
Transconductance
4
5
On-Resistance vs. Drain Current
0.30
TC = −55_C
0.25
r DS(on)− On-Resistance ( W )
12
25_C
9
125_C
6
3
0
VGS = 4.5 V
0.20
VGS = 10 V
0.15
0.10
0.05
0.00
0
3
6
9
12
15
0
3
6
ID − Drain Current (A)
V GS − Gate-to-Source Voltage (V)
Ciss
200
150
100
Coss
50
12
15
4
5
Gate Charge
10
300
250
9
ID − Drain Current (A)
Capacitance
350
C − Capacitance (pF)
3
VGS − Gate-to-Source Voltage (V)
15
g fs − Transconductance (S)
1
Crss
0
VDS = 50 V
ID = 6.5 A
8
6
4
2
0
0
20
40
60
80
VDS − Drain-to-Source Voltage (V)
3/5
100
0
1
2
3
Qg − Total Gate Charge (nC)
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SUD06N10-255L
Automotive N-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2.5
Source-Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
10
2.0
I S − Source Current (A)
rDS(on) − On-Resiistance
(Normalized)
VGS = 10 V
ID = 3 A
1.5
1.0
0.5
0.0
−50
−25
0
25
50
75 100 125
TJ − Junction Temperature (_C)
150
TJ = 175_C
TJ = 25_C
1
175
0
0.2
0.4
0.6
0.8
1.0
VSD − Source-to-Drain Voltage (V)
1.2
THERMAL RATINGS
Maximum Avalanche Drain Current vs. Case Temperature
8
Safe Operating Area
10
10 ms
*Limited by rDS(on)
I D − Drain Current (A)
I D − Drain Current (A)
6
4
2
1
1 ms
10 ms
TC = 25_C
Single Pulse
0
0
25
50
75
100
125
TC − Case Temperature (_C)
1
150
175
0.1
100 ms
1 s, dc
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
100 ms
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10−5
4/5
10−4
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
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100
SUD06N10-255L
Automotive N-Channel
100 V (D-S) 175 °C MOSFET
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