DRF200G 15V, 8A, 30MHz MOSFET Driver The DRF200 is a High-Speed Power MOSFET driver with a unique anti-ring function. It is intended to drive the gate of a power MOSFET with ≥3nF gate capacitance to 15V at frequencies up to 15MHz. It can produce output currents ≥8A RMS, while dissipating 60W. DRF200 IN FEATURES TYPICAL APPLICATIONS • Switching Frequency: DC TO 30MHz 50Ω Load • MOSFET Drivers • Switching Frequency: DC TO 15MHz 3nf Load • RF Generators • Switching Speeds 10ns 50Ω, 15ns 3nF Load • Switch Mode Power Amplifiers • Low Pulse Width Distortion, ≤ 2% SG GND +Vdd OUT • Digital Output Amplifiers • Single Power Supply • 1V CMOS Schmitt Trigger Input ~ 1V Hysteresis • Current Output Pk 8A RMS • Pulse Generators • Laser Diode Drivers • Ultrasound Transducer Drivers • Power Dissipation Capability 60W • Acoustic Optical Modulators • RoHS compliant • High Power Clock Drivers Driver Absolute Maximum Ratings Symbol Parameter VDD Supply Voltage IN Input Single Voltage IO PK Output Current Peak TJMAX Operating Temperature Ratings Unit 18 V -.7 to +5.5 8 A 175 °C Driver Specifications Min Typ Max VDD Supply Voltage Parameter 8 15 18 IN Input Voltage 3 5.5 Unit V IN(R) Input Voltage Rising Edge 3 IN(F) Input Voltage Falling Edge 3 IDDQ Quiescent Current 2 mA Output Current 8 A IO Coss Output Capacitance Ciss Input Capacitance RIN Input Parallel Resistance ns 2500 pF 3 1 mΩ VT(ON) Input, Low to High Out 0.8 1.1 VT(OFF) Input, High to Low Out 1.9 2.2 TD Prop. Delay 35 tr Rise Time 10 tf Fall Time 10 Microsemi Website - http://www.microsemi.com V ns 050-4970 Rev B 4-2009 Symbol Output Characteristics Symbol DRF200G Parameter Min Rout Output Resistance FMAX Operating Frequency CL=3000nF + 50Ω 15 FMAX Operating Frequency RL=50Ω 30 Typ 1 Max Unit Ω MHz Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance Junction to Case 1.4 RθJHS Thermal Resistance Junction to Heat Sink 2.2 TJSTG Storage Temperature TJMAX Maximum Junction Temperature 175 PD Maximum Power Dissipation @ TSINK = 25°C >60 PDC Total Power Dissipation @ TC = 25°C >100 -55 to 150 Unit °C/W °C W Microsemi reserves the right to change, without notice, the specifications and information contained herein. 050-4970 Rev B 4-2009 Figure 1, DRF100 Simplified Circuit Diagram The Simplified DRF100 Circuit Diagram is illustrated above. The Schmitt trigger input (pin 1), Kelvin signal ground (pin 2) and the Anti-Ring Function, provide improved stability and control. The IN pin (1) is applied to a Schmitt Trigger. The signal is then applied to the intermediate drivers and level shifters; this section contains proprietary circuitry designed specifically for ring abatement. The P channel and N channel power drivers provide the high current to the OUTPUT (pin 5.) DRF200G Figure 2, DRF200 Test Circuit The Test Circuit illustrated above was used to evaluate the DRF200 (available as an evaluation Board DRF2XX / EVALSW.) The input control signal is applied to the DRF200 via IN(1) and SG(2) pins using RG188. This provides excellent noise immunity and control of the signal ground currents. Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-4970 Rev B 4-2009 The +VDD input (4) is by-passed by C1. The capacitor used for this function must be capable of supporting the RMS currents and frequency of the gate load. DRF200G Pin Assignments Pin 1 IN Pin 2 SG Pin 3 Ground Pin 4 +Vdd Pin 5 Out 0.629 0.199 0.221 0.244 0.823 DRF200 0.094 0.048 0.070 IN SG GND +Vdd OUT 0.023 .100 .400 All dimensions are ± .005 050-4970 Rev B 4-2009 Figure 3, DRF200 Mechanical Outline