MICROSEMI DRF1201_11

DRF1201
1000V, 26A, 30MHz
MOSFET Driver Hybrid
The DRF1201 hybrid includes a high power gate driver and the power
MOSFET. The driver output can be configured as Inverting and NonInverting. It was designed to provide the system designer increased
flexibility and lowered cost over a non-integrated solution.
FEATURES
TYPICAL APPLICATIONS
• Switching Frequency: DC TO 30MHz
• Switching Speed 3-4ns
• Class C, D and E RF Generators
• Low Pulse Width Distortion
• BVds = 1Kv
• Switch Mode Power Amplifiers
• Ids = 26A avg.
• Pulse Generators
• Rds(on) ≤ .55 Ohm
• Ultrasound Transducer Drivers
• PD = 1100W
• Acoustic Optical Modulators
• Single Power Supply
• 1V CMOS Schmitt Trigger Input 1V
Hysteresis
• Inverting Non-Inverting Select
• RoHS Compliant
Driver Absolute Maximum Ratings
Symbol
VDD
Parameter
Min
Typ
Supply Voltage
IN, FN
Input Single Voltages
IO PK
Output Current Peak
TJMAX
Operating Temperature
Max
15
-.7 to +5.5
Unit
V
8
A
175
°C
Max
Unit
Driver Specifications
Parameter
Min
Typ
VDD
Supply Voltage
10
15
IN
Input Voltage
3
5.5
V
IN(R)
Input Voltage Rising Edge
3
IN(F)
Input Voltage Falling Edge
3
IDDQ
Quiescent Current
2
mA
Output Current
8
A
Ciss
Input Capacitance
3
RIN
Input Parallel Resistance
1
IO
ns
MΩ
VT(ON)
Input, Low to High Out (See Truth Table)
0.8
1.1
VT(OFF)
Input, High to Low Out (See Truth Table)
1.9
2.2
TDLY
Time Delay (throughput)
38
tr
Rise Time
5
tf
Fall Time
5
TD
Prop. Delay
35
Microsemi Website - http://www.microsemi.com
V
ns
ns
050-4972 Rev E 5-2011
Symbol
DRF1201
Driver Output Characteristics
Symbol
Parameter
Cout
Output Capacitance
Rout
Output Resistance
Min
Lout
Output Inductance
FMAX
Operating Frequency CL = 3000nF + 50Ω
30
FMAX
Operating Frequency RL = 50Ω
50
Typ
Max
Unit
2500
pF
.8
Ω
3
nH
MHz
Driver Thermal Characteristics
Symbol
Parameter
Min
Typ
RθJC
Thermal Resistance Junction to Case
1.5
RθJHS
Thermal Resistance Junction to Heat Sink
2.5
TJSTG
Storage Temperature
Max
°C/W
°C
-55 to 150
PDJHS
Maximum Power Dissipation @ TSINK = 25°C
60
PDJC
Total Power Dissipation @ TC = 25°C
100
Unit
W
MOSFET Absolute Maximum Ratings
Symbol
BVDSS
ID
Parameter
Min
Drain Source Voltage
1000
Typ
Drain-Source On State Resistance
Tjmax
Operating Temperature
Unit
V
Continuous Drain Current THS = 25°C
RDS(on)
Max
26
0.55
A
Ω
175
°C
Max
Unit
MOSFET Dynamic Characteristics
Symbol
Parameter
Min
Typ
Ciss
Input Capacitance
2000
Coss
Output Capacitance
165
Crss
Reverse Transfer Capacitance
75
pF
MOSFET Thermal Characteristics
Symbol
Parameter
Min
Typ
RθJC
Thermal Resistance Junction to Case
0.53
RθJHS
Thermal Resistance Junction to Heat Sink
0.141
TJSTG
Storage Temperature
PDHS
Maximum Power Dissipation @ TSINK = 25°C
1060
PDC
Total Power Dissipation @ TC = 25°C
2830
-55 to 150
Max
Unit
°C/W
°C
W
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-4972 Rev E 5-2011
Figure 1, DRF1201 Simplified Circuit Diagram
The Simplified DRF1201 Circuit Diagram is illustrated above. By including the driver high speed by-pass capacitor (C1), the contribution to
the internal parasitic loop inductance of the driver output is greatly reduced. This, coupled with the tight geometry of the hybrid, allows optimal
gate drive to the MOSFET. This low parasitic approach, coupled with the Schmitt trigger input (IN), Kelvin signal ground (SG) and the AntiRing Function, provide improved stability and control in Kilowatt to Multi-Kilowatt, high Frequency applications. Both the FN and IN pins are
referenced to the Kelvin ground (SG.) The signal is then applied to the intermediate drivers and level shifters; this section contains proprietary
circuitry designed specifically for the ring abatement. The power drivers provide high current to the gate of the MOSFETS.
DRF1201
The Function (FN, pin 3) is the invert or non-invert select Pin, it is Internally held high.
Truth Table *Referenced to SG
FN (pin 3)*
IN (pin 4)*
MOSFET
HIGH
HIGH
ON
HIGH
LOW
OFF
LOW
HIGH
OFF
LOW
LOW
ON
Figure 2, DRF1201 Test Circuit
The Test Circuit illustrated above was used to evaluate the DRF1201 (available as an evaluation Board DRF12XX / EVALSW.) The input control signal is applied to the DRF1201 via IN(4) and SG(5) pins using RG188. This provides excellent noise immunity and control of the signal
ground currents.
050-4972 Rev E 5-2011
The +VDD inputs (2,6) are by-passed (C1, C2, C4-C9), this is in addition to the internal by-passing mentioned previously. The capacitors used
for this function must be capable of supporting the RMS currents and frequency of the gate load. RL set for IDM at VDS max this load is used to
evaluate the output performance of the DRF1201.
DRF1201
Pin Assignments
Pin 1
Ground
Pin 2
+Vdd
Pin 3
FN
Pin 4
IN
Pin 5
SG
Pin 6
+Vdd
Pin 7
Ground
Pin 8
Source
Pin 9
Drain
Pin 10
Source
050-4972 Rev E 5-2011
All dimensions are ± .005
Figure 3, DRF1201 Mechanical Outline