IXYS DSA50C100QB

DSA 50 C 100QB
advanced
V RRM = 100 V
I FAV = 2x 25 A
V F = 0.72 V
Schottky
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
Part number
(Marking on product)
1
2
3
DSA 50 C 100QB
Features / Advantages:
Applications:
● Very low Vf
● Extremely low switching losses
● Low Irm-values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Low losses
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
Package:
TO-3P
● Industry standard outline
- compatible with TO-247
● Epoxy meets UL 94V-0
● RoHS compliant
Ratings
Definition
VRRM
max. repetitive reverse voltage
IR
reverse current
VF
max.
Unit
TVJ = 25 °C
100
V
VR = 100 V
TVJ = 25 °C
0.5
mA
VR = 100 V
TVJ = 125 °C
5
mA
I F = 25 A
I F = 50 A
TVJ = 25 °C
0.90
1.07
V
V
I F = 25 A
I F = 50 A
T VJ = 125 °C
0.72
0.90
V
V
rectangular, d = 0.5
T C = 155 °C
25
A
T VJ = 175 °C
0.45
7.3
V
mΩ
0.95
K/W
175
°C
TC = 25 °C
160
W
230
A
Conditions
Symbol
forward voltage
min.
I FAV
average forward current
VF0
rF
threshold voltage
slope resistance
R thJC
thermal resistance junction to case
TVJ
virtual junction temperature
Ptot
total power dissipation
I FSM
max. forward surge current
tp = 10 ms (50 Hz), sine
TVJ = 45 °C
CJ
junction capacitance
VR =
TVJ = 25 °C
EAS
non-repetitive avalanche energy
I AS = 10 A;
I AR
repetitive avalanche current
VA = 1.5·VR typ.; f = 10 kHz
for power loss calculation only
© 2005 IXYS all rights reserved
V; f = 1 MHz
L = 100 µH
TVJ = 25 °C
Data according to IEC 60747and per diode unless otherwise specified
pF
5
mJ
1
A
0614
IXYS reserves the right to change limits, conditions and dimensi
-55
typ.
DSA 50 C 100QB
advanced
Ratings
Symbol
Definition
Conditions
I RMS
RMS current
per pin*
R thCH
thermal resistance case to heatsink
MD
mounting torque
FC
mounting force with clip
T stg
storage temperature
min.
typ.
max.
Unit
50
A
0.25
Weight
K/W
0.8
1.2
Nm
20
120
N
-55
150
°C
5
g
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Outlines TO-3P
© 2005 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
0614
IXYS reserves the right to change limits, conditions and dimensi