DSA 50 C 100QB advanced V RRM = 100 V I FAV = 2x 25 A V F = 0.72 V Schottky High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number (Marking on product) 1 2 3 DSA 50 C 100QB Features / Advantages: Applications: ● Very low Vf ● Extremely low switching losses ● Low Irm-values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Low losses ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters Package: TO-3P ● Industry standard outline - compatible with TO-247 ● Epoxy meets UL 94V-0 ● RoHS compliant Ratings Definition VRRM max. repetitive reverse voltage IR reverse current VF max. Unit TVJ = 25 °C 100 V VR = 100 V TVJ = 25 °C 0.5 mA VR = 100 V TVJ = 125 °C 5 mA I F = 25 A I F = 50 A TVJ = 25 °C 0.90 1.07 V V I F = 25 A I F = 50 A T VJ = 125 °C 0.72 0.90 V V rectangular, d = 0.5 T C = 155 °C 25 A T VJ = 175 °C 0.45 7.3 V mΩ 0.95 K/W 175 °C TC = 25 °C 160 W 230 A Conditions Symbol forward voltage min. I FAV average forward current VF0 rF threshold voltage slope resistance R thJC thermal resistance junction to case TVJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current tp = 10 ms (50 Hz), sine TVJ = 45 °C CJ junction capacitance VR = TVJ = 25 °C EAS non-repetitive avalanche energy I AS = 10 A; I AR repetitive avalanche current VA = 1.5·VR typ.; f = 10 kHz for power loss calculation only © 2005 IXYS all rights reserved V; f = 1 MHz L = 100 µH TVJ = 25 °C Data according to IEC 60747and per diode unless otherwise specified pF 5 mJ 1 A 0614 IXYS reserves the right to change limits, conditions and dimensi -55 typ. DSA 50 C 100QB advanced Ratings Symbol Definition Conditions I RMS RMS current per pin* R thCH thermal resistance case to heatsink MD mounting torque FC mounting force with clip T stg storage temperature min. typ. max. Unit 50 A 0.25 Weight K/W 0.8 1.2 Nm 20 120 N -55 150 °C 5 g * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-3P © 2005 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 0614 IXYS reserves the right to change limits, conditions and dimensi