DSA 90 C 200 HB preliminary V RRM = 200 V I FAV = 2x 45 A V F = 0.86 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DSA 90 C 200 HB Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf ● Extremely low switching losses ● low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Housing: TO-247 Symbol Definition Conditions VRRM max. repetitive reverse voltage IR reverse current VF ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case virtual junction temperature typ. Unit max. 200 V VR = 200 V 0.9 mA VR = 200 V TVJ = 125 °C 5 mA IF = TVJ = 25 °C 0.96 V 1.18 V 0.86 V 45 A IF = 90 A IF = 45 A IF = 90 A rectangular, d = 0.5 for power loss calculation only T VJ min. TVJ = 25 °C TVJ = 25 °C TVJ = 125 °C 1.14 V TC = 145°C 45 A TVJ = 175°C 0.52 V 6.5 0.55 mΩ K/W 175 °C -55 Ptot total power dissipation TC = 25 °C 275 W I FSM max. forward surge current t = 10 ms (50 Hz), sine TVJ = 45°C 450 A CJ junction capacitance VR = 24 V; f = 1 MHz TVJ = 25 °C IXYS reserves the right to change limits, conditions and dimensions. © 2008 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 260 pF 20080605b DSA 90 C 200 HB preliminary Ratings Symbol Definition min. Conditions I RMS RMS current RthCH thermal resistance case to heatsink Tstg storage temperature per pin max. Unit 70 0.25 -55 Weight A K/W 150 °C 6 MD mounting torque FC mounting force with clip 1) typ. 1) 0.8 20 g 1.2 120 Nm N IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part number Logo Marking on product DateCode Assembly Code D S A 90 C 200 abcdef YYWW XXXXXX = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] HB = TO-247AD (3) Ordering Standard Part Name DSA 90 C 200 HB IXYS reserves the right to change limits, conditions and dimensions. © 2008 IXYS all rights reserved Marking on Product DSA90C200HB Delivering Mode Tube Base Qty Code Key 30 502854 Data according to IEC 60747and per diode unless otherwise specified 20080605b DSA 90 C 200 HB preliminary Outlines TO-247 Symbol A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 ØP1 Inches min max 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.291 IXYS reserves the right to change limits, conditions and dimensions. © 2008 IXYS all rights reserved Millimeters min max 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 Data according to IEC 60747and per diode unless otherwise specified 20080605b DSA 90 C 200 HB preliminary 100 1000 10.000 TVJ = 150°C 1.000 10 TVJ = 150°C 125°C 25°C CT [pF] IR [mA] IF [A] 125°C 0.100 100°C TVJ= 25°C 100 75°C 0.010 50°C 25°C 1 0.2 0.6 0.8 1.0 VF [V] 1.2 1.4 0 Fig. 1 Maximum forward voltage drop characteristics 40 80 120 VR [V] 160 200 Fig. 2 Typ. reverse current IR versus reverse voltage VR 100 100 90 90 0 50 100 VR [V] 150 200 Fig. 3 Typ. junction capacitance CT versus reverse voltage VR 80 80 DC 70 70 d = 0.5 P(AV) [W] IF(AV) [A] 10 0.001 0.4 60 50 40 60 d= DC 0.5 0.33 0.25 0.17 0.08 50 40 30 30 20 20 10 10 0 0 0 40 80 120 TC [°C] 0 10 20 30 40 50 60 70 80 90 160 IF(AV) [A] Fig. 4 Avg: forward current IF(AV) versus case temperature TC Fig. 5 Forward power loss characteristics ZthJC [K/W] 1 D = 0.5 0.33 0.25 Single Pulse 0.17 0.08 0.1 DSA90C200HB 0.001 0.01 0.1 1 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2008 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20080605b