KISEMICONDUCTOR 1S2076A

KI
SEMICONDUCTOR
1S2076A
REVERSE VOLTAGE : 60 V
CURRENT: 0.15 A
SMALL SIGNAL SWITCHING DIODE
FEATURES
DO-35(GLASS)
Silicon epitaxial planar diode
High speed switching diode
500 m W power dissipation
MECHANICAL DATA
Case: DO-35, glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient temperature unless otherwise specified.
MAXIMUM RATINGS
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
half w ave rectification w ith resist.load
@TA =25 and f 50Hz
Forw ard surge current @ t<1s and TJ =25
Pow er dissipation
@ TA =25
Junction temperature
Storage temperature range
1S2076A
UNITS
VR
V RM
60
70
V
V
IAV
150
mA
1.0
A
mW
IFSM
Ptot
TJ
TSTG
250 1)
175
-55 --- +175
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
VF
MIN
-
TYP
-
MAX
0.8
UNITS
V
@ V R=30V
IR
-
-
0.1
μA
@ V F=V R=1V,f=1MHz
CJ
-
-
3.0
pF
trr
-
-
8.0
ns
Forw ard voltage at IF=10mA
Leakage current
Capacitance
Reverse recovery time
from I F=IR=10mA to Irr=1mA
Document Number 0268032
KI SEMICONDUCTOR
1.
RATINGS AND CHARACTERISTIC CURVES
1S2076A
FIG.1 -- ADMISSIBLE POWER DISSIPATION
NNNNNN VERSUS AMBIENT TEMPERATURE
FIG.2 -- FORWARD CHARACTERISTICS
mA
mW
10
500
4
450
10 3
400
Ptot
350
IF
300
10
T J =100
2
T J =25
250
10
200
150
1
100
50
0
0
100
10 -1
200℃
0
1
TA
VF
2V
FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
A
100
V=tp/T
IFSM
10
tp
n=0
0.1
0.2
0.5
1
T=1/fp
IFSM
T
0.1
10
-5
10
-3
10
-2
10
-1
1
10S
tp
Document Number 0268032
KI SEMICONDUCTOR
2.
RATINGS AND CHARACTERISTIC CURVES
FIG.4 -- RECTIFICATION EFFICIENCY
JJJJJJJJMEASUREMENT CIRCUIT
1S2076A
FIG.5 -- RELATIVE CAPACITANCE VERSUS
JJJJJJJJJJJJJJ
VOLTAGE
1.1
D.U.T.
60
TJ=25
f=1MHz
1.0
VRF=2V
2nF
5K
VO
Ctot(VR)
Ctot(OV)
0.9
0.8
0.7
0
2
4
6
8
10V
VR
FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATUREFF
FIG.7 -- DYNAMIC FORWARD RESISTANCE
FFFVERSUS FORWARD CURRENT
nA
10
10 4
4
TJ=25℃
f=1KHz
10 3
r
10 2
10
3
10
2
F
10
10
VR=20V
1
1
Document Number 0268032
0
100
200℃
KI SEMICONDUCTOR
10
-2
10
-1
1
10
IF
10
2
mA
3.