LUGUANG BAV23S

BAV23S
Small Signal Diode
SOT-23
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
1.Base
1 GATE
2.Emitter
2 SOURCE
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
3.collector
3 DRAIN
Dimensions in inches and (millimeters)
Absolute Maximum Ratings *
Symbol
Ta = 25°C unless otherwise noted
Value
Unit
VRRM
Maximum Repetitive Reverse Voltage
Parameter
250
V
IF(AV)
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 microsecond
Pulse Width = 100 microsecond
9.0
3.0
A
A
-55 to +150
°C
150
°C
Value
Unit
TSTG
Storage Temperature Range
TJ
Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
PD
Power Dissipation
350
mW
RθJA
Thermal Resistance, Junction to Ambient*
357
°C/W
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Max
VR
Breakdown Voltage
IR = 100µA
VF
Forward Voltage
IF = 100mA
IF = 200mA
1.0
1.25
V
V
IR
Reverse Leakage
VR = 250V
VR = 250V, TA = 150°C
100
100
nA
µA
trr
Reverse Recovery Time
IF = IR = 30mA, IRR = 3.0mA,
RL = 100Ω
50
ns
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250
Units
V
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BAV23S
Small Signal Diode
Typical Performance Characteristics
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BAV23S
Small Signal Diode
400
300
250
300
IF - CURRENT (mA)
P - POWER DISSIPATION (mW)
Typical Performance Characteristics (Continued)
200
100
0
25
50
75
100
125
o
T A - A M B IEN T TEM PE R A TU R E ( C )
Figure 9. Power Derating Curve
150
200
150
100
50
0
0
25
50
75
100
150
o
Figure 10. Average Rectified Current(IO)
vs Ambient Temperature(TA)
Figure 11. Reverse Recovery Time vs
Reverse Recovery Current (Irr)
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125
T A - AMBIENT TEMPERATURE ( C)
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