SML09GB22U2C MECHANICAL DATA Dimensions in mm (inches) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 2 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) COMMON CATHODE SCHOTTKY DIODES IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS PACKAGE SMD1 (TO-276AB) Underside View PAD 1 — Anode 1 PAD 2 — Cathode PAD 3 — Anode 2 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise stated) VRRM IFAV 220V Repetitive Peak Reverse Voltage Average Forward Current TC = 25°C 12A per side TC = 90°C 9A per side IFSM Maximum Surge Forward Current Tvj = 45 °C; tp = 10ms (50Hz), sine Tvj Virtual Junction Temperature -55 + 175°C Tstg Storage Temperature Range -55 + 150°C Ptot TC = 25°C Rthjc Thermal Characteristics 20A 78W 1.6°C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter IR* Reverse Current VF* Forward Voltage CJ Capacitance Test Conditions Min. Typ. TVJ = 25°C VR = VRRM TVJ = 125°C VR = VRRM 1.3 IF = 5A TVJ = 125°C 1.3 IF = 5A TVJ = 25°C 1.2 VR = 100V TVJ = 125°C 18 Max. 1.3 1.5 Unit mA V PF Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 2853 Issue 2 SML09GB22U2C FIG. 1 TYP. FORWARD CHARCTERISTICS FIG. 2 TYP. JUNCTION CAPACITY VERSUS BLOCKING VOLTAGE NOTE: Explanatory comparison for the basic operational behaviour of rectifier diodes and Gallium Arsenide Schottky diodes. Conduction forward characteristics turn off characteristics turn on characteristics Rectifier Diode GaAs Schottky Didoe by majority + minority carriers VF (IF) extraction of excess carriers causes temperature dependant reverse recovery (trr, IRM, Qrr) delayed saturation leads to VFR by majority carriers only VF(IF), See Fig 1 reverse current charges junction capacity Cj, see Fig 2; not temperature dependant no turn on overvoltage peak. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 2853 Issue 2