2N7000CSM MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 0.31 rad. (0.012) 3 FEATURES 2 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 1 1.91 ± 0.10 (0.075 ± 0.004) • V(BR)DSS = 60V Ω • RDS(ON) = 5Ω A 0.31 rad. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) A= • ID = 200mA 1.40 (0.055) max. 1.02 ± 0.10 (0.04 ± 0.004) • Hermetic Ceramic Surface Mount package • Screening Options Available SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 – Gate PAD 2 – Source PAD 3 – Drain ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated) VDS Drain – Source Voltage 60V VGS Gate – Source Voltage ±40V ID Drain Current IDM Pulsed Drain Current * PD Power Dissipation Tj Operating Junction Temperature Range –55 to 150°C Tstg Storage Temperature Range –55 to 150°C @ TCASE = 25°C 200mA 500mA @ TCASE = 25°C 300mW * Pulse width limited by maximum junction temperature. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 7022 Issue: 1 2N7000CSM ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. 70 Max. Unit STATIC CHARACTERISTICS V(BR)DSS Drain – Source Breakdown Voltage VGS = 0V ID = 10μA 60 VGS(th) Gate Threshold Voltage VDS = VGS ID = 0.25mA 0.8 IGSS Gate – Body Leakage Current VGS = ±20V VDS = 0V -10 nA IDSS Zero Gate Voltage Drain Current VDS = 60V VGS = 0V 1.0 μA TCASE = 125°C 1.0 mA ID(on)* On–State Drain Current RDS(on)* Drain – Source On Resistance VDS(on)* Drain – Source On Voltage gFS* Forward Transconductance VDS≥2VDS(ON) VGS = 4.5V 3.0 75 V mA VGS = 10V 5 ID = 0.5A TCASE = 125°C VGS = 4.5V ID = 75mA 0.4 VGS = 10V ID = 0.5A 2.5 VGS = 10V ID = 0.5A 9 100 Ω V ms DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = 25V 60 Coss Output Capacitance VGS = 0V 25 Crss Reverse Transfer Capacitance f = 1MHz 5 pF SWITCHING CHARACTERISTICS tON tOFF Turn–On Time Turn–Off Time VDD = 30V VGEN = 10V RL = 150Ω RG = 25Ω 10 ns ID = 0.2A 10 * Pulse Test: PW = 80 μs , δ ≤ 1% Parameter RθJA Thermal Resistance, Junction to Ambient Min. Typ. Max. Unit 416 °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 7022 Issue: 1