Freescale AO4454L/MC4454L N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 78 @ VGS = 10V 100 92 @ VGS = 4.5V Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology ID (A) 5.2 4.8 1 8 2 7 3 6 4 5 o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units VDS Drain-Source Voltage 100 V ±20 Gate-Source Voltage VGS o TA=25 C a Continuous Drain Current o ID TA=70 C b Pulsed Drain Current Continuous Source Current (Diode Conduction) a ±5.2 IDM ±50 IS 2.3 o TA=25 C a Power Dissipation o Operating Junction and Storage Temperature Range a Maximum Junction-to-Case a Maximum Junction-to-Ambient t <= 5 sec W 2.2 o TJ, Tstg -55 to 150 Symbol t <= 5 sec A 3.1 PD TA=70 C THERMAL RESISTANCE RATINGS Parameter A ±3.9 RθJC RθJA Maximum 25 50 C Units o C/W C/W o Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 www.freescale.net.cn Freescale AO4454L/MC4454L SPECIFICATIONS (T A = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = 250 uA Limits Unit Min Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A IDSS ID(on) Drain-Source On-ResistanceA A Forward Tranconductance Diode Forward Voltage rDS(on) 1 VDS = 0 V, VGS = 20 V ±100 VDS = 80 V, VGS = 0 V 1 25 o VDS = 80 V, VGS = 0 V, TJ = 55 C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 5.2 A VGS = 4.5 V, ID = 4.8 A V nA uA 20 A 78 92 mΩ gfs VSD VDS = 15 V, ID = 5.2 A IS = 2.3 A, VGS = 0 V 40 0.7 S V Qg Qgs Qgd VDS = 15 V, VGS = 4.5 V, ID = 5.2 A 12.5 2.6 4.6 nC td(on) tr td(off) tf VDD = 25 V, RL = 25 Ω , ID = 1 A, VGEN = 10 V 20 9 70 20 nS Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. FREESCALE reserves the right to make changes without fu rther notice to any products herein. freescale makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assumeany liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale product could create a situ ation where personal injury or death may occur. Should Buyer purchase or use freescale products for any s uch unintended or unauthorized application, Buyer shall indemnify and hold freescale and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale was negligent regarding the design or manufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer. 2 www.freescale.net.cn Freescale AO4454L/MC4454L Typical Electrical Characteristics 30 40 10V VD=5V ID Drain Current (A) IDSDrain Current (A) 35 6V 4.5V 25 20 15 10 30 25 20 15 10 5 5 3.5V 0 0 0 0.5 1 1.5 1 0 2 VDS(V) 2 3 4 5 6 VGS Gate to Source Voltage (V) Output Characteristics Transfer Characteristics 1600 0.2 1400 Capacitance (pF) Ω) ( RDS(ON) resistance 0.18 0.16 0.14 4.5V 6V 0.12 0.1 10V 0.08 1200 Ciss 1000 800 600 0.06 400 0.04 200 0.02 0 Coss 0 Crss 0 0 10 20 30 5 15 20 VDS (V) ID Drain Current (A) On-Resistance vs. Drain Current 10 10 40 Capacitance VD= 15V ID= 10A r DS(ON) - On-Resistance (Normalized) 2.6 8 VGS(V) 6 4 2 VGS = 10V 2.2 1.8 1.4 1 0.6 0.2 -50 0 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) 0 2 4 6 8 10 12 14 16 18 20 QG, Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 3 www.freescale.net.cn Freescale AO4454L/MC4454L Typical Electrical Characteristics 0.2 Id=10A 0.18 10 IS - Source Current (A) 0.16 Ω) ( RDS(ON) Resistance 100 125 oC 1 25 oC 0.1 0.01 0.14 0.12 0.1 0.08 0.06 0.04 0.001 0.02 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 0 VSD - Source-to-Drain Voltage (V) 0 2 4 6 8 10 VGS Gate to Source Voltage(V) Source-Drain Diode Forward Voltage On-Resistance vs.Gate-to Source Voltage 30 3.2 ID = 250µA 20 Power (W) V GS(th) - Variance (V) 2.9 2.6 2.3 10 2 1.7 0 1.4 -50 -25 0 25 50 75 100 125 150 0.01 175 0.1 1 TJ - Temperature (o C) 10 Time (sec) Threshold Voltage Single Pulse Power D =0.5 RθJ A(t) = r(t) * RθJA 0.2 0.1 Impedance Normalized Effective Transient Thermal 1 RθJA = 125 °C/W 0.1 0.05 P(pk 0.02 t1 0.01 t2 0.01 SINGLE PULSE 0.001 0.0001 TJ - TA = P * RθJA (t) Duty Cycle, D = t1 /t 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 4 www.freescale.net.cn 100 Freescale AO4454L/MC4454L Package Information SO-8: 8LEAD H x 45° 5 www.freescale.net.cn