Freescale AO4 4 18 / MC4 4 18 N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 22 @ VGS = 10V 30 30 @ VGS = 4.5V Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology ID (A) 9.4 7.0 1 8 2 7 3 6 4 5 o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage ±20 VGS o TA=25 C a Continuous Drain Current o TA=70 C b Pulsed Drain Current a Continuous Source Current (Diode Conduction) 9.4 ID IDM ±30 IS 1.6 o TA=25 C a Power Dissipation o TA=70 C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Steady State A 3.1 PD W 2 o C TJ, Tstg -55 to 150 Symbol t <= 10 sec A 7.4 RθJA Maximum 50 92 Units o C/W C/W o Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 www.freescale.net.cn Freescale AO4 4 18 / MC4 4 18 SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = 250 uA Limits Unit Min Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A IDSS VDS = 0 V, VGS = ±20 V A A Forward Tranconductance Diode Forward Voltage ±100 VDS = 24 V, VGS = 0 V 1 25 o VDS = 24 V, VGS = 0 V, TJ = 55 C ID(on) Drain-Source On-Resistance 1 VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 9.2 A VGS = 4.5 V, ID = 7 A rDS(on) gfs VSD VDS = 15 V, ID = 9.2 A IS = 2.3 A, VGS = 0 V 20 V nA uA A 22 30 40 0.7 mΩ S V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS = 10 V, VGS = 4.5 V, ID = 7 A VDS = 15 V, VGS = 0 V, f = 1MHz VDD = 10 V, RL = 6 Ω , ID = 1 A, VGEN = 10 V 4.0 1.1 1.4 720 165 60 16 5 23 3 nC pF nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. FREESCALE reserves the right to make changes without further notic e to any products herein. freescale makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in freescale data sheet s and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale product could create a situation where personal injury or death may occur. Should Buyer purchase or use freescale products for any such uninte nded or unauthorized application, Buyer shall indemnify and hold freescale and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale was negligent regarding the design or m anufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer. 2 www.freescale.net.cn Freescale AO4 4 18 / MC4 4 18 Typical Electrical Characteristics (N-Channel) 30 TA = -55oC VDS = 5V VGS = 10V 25 6.0V 20 5.0V 4.0V 15 3.0V 10 5 25oC 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 125oC 20 15 10 5 0 0 0 0.5 1 1.5 2 0.5 2.5 1.5 2.5 3.5 4.5 VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Body Diode Forward Voltage Variation with Source Current and Temperature 1500 2 CAPACITANCE (pF) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5 4.5V 1.5 6.0V 1 10V 0.5 0 5 10 15 20 25 f = 1MHz VGS = 0 V 1200 CISS 900 600 COSS 300 CRSS 0 30 0 ID, DRAIN CURRENT (A) 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 3. On Resistance Vs Vgs Voltage Figure 4. Capacitance Characteristics 10 1.6 8 Normalized RDS(on) Vgs Gat e-Source Volt age ( V ) 5 6 4 2 0 VGS = 10V I D = 7A 1.4 1.2 1.0 0 .8 0 .6 0 2 4 6 8 -50 10 -2 5 0 25 50 75 10 0 12 5 150 TJ Juncation Temperature (C) Qg, Charge (nC) Figure 5. Gate Charge Characteristics Figure 6. On-Resistance Variation with Temperature 3 www.freescale.net.cn Freescale AO4 4 18 / MC4 4 18 Typical Electrical Characteristics (N-Channel) RDS(ON), ON-RESISTANCE (OHM) IS, REVERSE DRAIN CURRENT (A) 100 VGS = 0V 10 o 1 TA = 125 C o 25 C 0.1 0.01 0.001 0.0001 0.1 ID = 7 A 0.08 0.06 0.04 o TA = 25 C 0.02 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 2 Figure 7. Transfer Characteristics 6 8 50 VDS = VGS ID = -250mA 2 1.8 1.6 1.4 1.2 1 -50 -25 0 25 50 75 100 125 10 Figure 8. On-Resistance with Gate to Source Voltage 2.2 P(pk), PEAK TRANSIENT POWER (W) -Vth, GATE-SOURCE THRESTHOLD VOLTAGE (V) 4 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) 150 175 SINGLE PULSE RqJA = 125oC/W TA = 25oC 40 30 20 10 0 0.001 0.01 TA, AMBIENT TEMPERATURE (oC) Figure 9. Vth Gate to Source Voltage Vs Temperature 0.1 1 t1, TIME (SEC) 10 100 Figure 10. Single Pulse Maximum Power Dissipation Normalized Thermal Transient Junction to Ambient 1 D = 0.5 R qJ A(t) = r(t) + R qJ A R qJ A = 125 癈/W 0.2 0.1 0.1 0.0 P (pk) 0.02 t1 t2 TJ - TA = P * R qJ A(t) Duty C yc le , D = t1 / t2 0.01 0.01 S INGLE P ULS E 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIM E (s e c ) Figure 11. Transient Thermal Response Curve 4 www.freescale.net.cn Freescale AO4 4 18 / MC4 4 18 Package Information SO-8: 8LEAD H x 45° 5 www.freescale.net.cn