SHENZHENFREESCALE AO6800

Freescale
AO68 00 / MC68 00
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
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PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
63 @ VGS = 4.5V
30
110 @ VGS = 2.5V
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
TSOP-6 saves board space
Fast switching speed
High performance trench technology
ID (A)
3.5
3.0
1
6
2
5
3
4
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Symbol
Limit
Units
Parameter
Drain-Source Voltage
30
VDS
V
Gate-Source Voltage
VGS
±12
o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
3.5
ID
IDM
Pulsed Drain Current
a
16
IS
Continuous Source Current (Diode Conduction)
TA=25 C
a
o
TA=70 C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
a
Maximum Junction-to-Ambient
t <= 10 sec
Steady-State
1.3
PD
RθJA
W
0.8
TJ, Tstg
Symbol
A
1.25
o
Power Dissipation
A
2.8
o
C
-55 to 150
Maximum
Units
100
o
166
o
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
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Freescale
AO68 00 / MC68 00
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
Limits
Unit
Min Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
IDSS
ID(on)
A
Drain-Source On-Resistance
A
Forward Tranconductance
Diode Forward Voltage
rDS(on)
gfs
VSD
0.7
VDS = 0 V, VGS = 12 V
±100
VDS = 24 V, VGS = 0 V
1
25
o
VDS = 24 V, VGS = 0 V, TJ = 55 C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 3.5 A
VGS = 2.5 V, ID = 3 A
VDS = 15 V, ID = 3.5 A
IS = 2.3 A, VGS = 0 V
6
V
nA
uA
A
63
110
6.9
0.8
mΩ
S
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS = 15 V, VGS = 4.5 V,
ID = 3.5 A
VDS = 15 V, VGS = 0 V, f = 1MHz
VDD = 25 V, RL = 25 Ω , ID = 1 A,
VGEN = 10 V
6.3
0.9
1.9
265
54
24
16
5
23
3
nC
pF
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
FREESCALE reserves the right to make changes without further notic e to any products herein. freescale makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising ou t of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in freescale data sheet s and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the freescale product could create a situation where personal injury or death may occur.
Should Buyer purchase or use freescale products for any such uninte nded or unauthorized application, Buyer shall indemnify and hold freescale and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that freescale was negligent regarding the design or m anufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer.
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Freescale
AO68 00 / MC68 00
Typical Electrical Characteristics (N-Channel)
10
T A = -55oC
20
ID - Drain Current (A)
4.5V
15
2.5V
10
5
125oC
6
4
2
0
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
0
0.5
VDS - Drain-to-Source Voltage (V)
1
1.5
2
2.5
3
V GS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
400
Ciss
Capacitance (p
1.4
1.2
4.5V
1
300
200
Coss
100
10V
0.8
0
5
10
15
20
0 Crss
25
0
ID - Drain Current (A)
5
10
15
20
VDS (V)
On-Resistance vs. Drain Current
Capacitance
10
r DS(ON) - On-Resistance (Normalized)
VD= 15V
I D= 3.5A
9
8
7
VGS(V)
rDS(ON) - Normalized On-Resistance
ID - Drain Current (A)
25oC
8
6
5
4
3
2
1
1.6
VGS = 4.5V
1.4
1.2
1
0.8
0.6
-50
0
0
1
2
3
4
5
-25
0
25
50
75
100
125
TJ - Junction Temperature (oC)
6
QG, Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
3
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150
Freescale
AO68 00 / MC68 00
Typical Electrical Characteristics (N-Channel)
0.07
IS - Source CURRENT (A
10
rDS(ON) - On-Resistance (OHM)
100
TA = 125oC
1
o
25 C
0.1
0.01
0.001
0.06
0.05
0.04
0.03
0.02
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
0.01
1.4
2
VSD - Source-to-DrainVoltage (V)
2.5
3
3.5
4
4.5
5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs.Gate-to Source Voltage
30
1.8
ID = 250µA
20
Power (W)
1.4
1.2
1
0.8
10
0.6
0.4
0.2
0
0
-50
-25
0
25
50
75
100
125
0.01
150
0.1
1
TJ - Temperature (oC)
1
10
Time (sec)
Threshold Voltage
Single Pulse Power
D =0.5
RθJA (t) = r(t) * RθJA
0.2
0.1
Impedance
Normalized Effective Transient Thermal
VGS(th) - Variance (V)
1.6
RθJA = 125 °C/W
0.1
0.05
P(pk
0.02
t1
0.01
t2
0.01
TJ - TA = P *
SINGLE PULSE
0.001
0.0001
RθJA (t)
Duty Cycle, D = t1
/t
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
4
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100
Freescale
AO68 00 / MC68 00
Package Information
TSOP-6: 6LEAD
5
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