SHENZHENFREESCALE AO7400

Freescale
AO7400/ MC7400
N-Channel 20V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
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PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.058 @ VGS = 4.5 V
20
0.082 @ VGS = 2.5V
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SC70-3 saves board space
Fast switching speed
High performance trench technology
ID (A)
2.0
1.7
G
D
S
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Symbol Maximum Units
Parameter
Drain-Source Voltage
20
VDS
V
Gate-Source Voltage
VGS
±8
o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
TA=25 C
a
o
±20
IS
1.6
TA=70 C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
a
Maximum Junction-to-Ambient
PD
A
1.7
IDM
o
Power Dissipation
2.0
ID
A
0.34
W
0.22
o
C
TJ, Tstg -55 to 150
Symbol Maximum Units
t <= 5 sec
Steady-State
RTHJA
100
166
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
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AO7400/ MC7400
SPECIFICATIONS (T A = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
Min
Limits
Unit
Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
IDSS
ID(on)
A
Drain-Source On-Resistance
A
Forward Tranconductance
Diode Forward Voltage
rDS(on)
gfs
VSD
0.7
VDS = 0 V, VGS = ±8 V
±100
VDS = 16 V, VGS = 0 V
1
10
o
VDS = 16 V, VGS = 0 V, TJ = 55 C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 2.0 A
VGS = 2.5 V, ID = 1.7 A
VDS = 10 V, ID = 2.0 A
IS = 1.6 A, VGS = 0 V
10
V
nA
uA
A
58
82
11.3
0.75
mΩ
S
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS = 10 V, VGS = 4.5 V, ID = 2.0 A
VDS = 15 V, VGS = 0 V,
f = 1MHz
VDD = 10 V, RL = 15 Ω, ID = 1 A,
VGEN = 4.5 V
7.5
0.6
1.0
720
165
60
8
24
35
10
nC
pF
ns
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
FREESCALE reserves the right to make changes without further notic e to any products herein. Freescale makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor doesfreescale assume any liability arising ou t of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided infreescale data sheet s and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescaleproducts are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the freescale product could create a situation where personal injury or death may occur.
Should Buyer purchase or use freescale products for any such uninte nded or unauthorized application, Buyer shall indemnify and hold freescale and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that freescale was negligent regarding the design or m anufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer.
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AO7400/ MC7400
Typical Electrical Characteristics (N-Channel)
40
30
5.0V
20
4.0V
10
3.0V
2
3
4
125oC
20
15
10
5
0
1
25oC
25
ID, DRAIN CURRENT (A)
I D , D R A IN C U R R E N T ( A
6.0V
30
0
TA = -55oC
VDS = 5V
VGS = 10V
0
5
0.5
VDS, DRAIN-SOURCE VOLTAGE (V)
1.5
2.5
3.5
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Body Diode Forward Voltage Variation
with Source Current and Temperature
700
VGS =
2.5
f = 1MHz
VGS = 0 V
600
C A P A C IT A N C E ( p F
R D S ( O N ) , N O R M A L IZ E D
D R A IN - S O U R C E O N - R E S IS T A N C
3
2
4.5V
1.5
10V
1
CISS
500
400
300
200
COSS
100
CRSS
0
0.5
0
5
10
15
20
25
0
30
5
10
Figure 3. On Resistance Vs Vgs Voltage
1.6
ID = 5.3A
15V
25
30
VGS = 10V
ID = 7A
1.4
Normalized RDS(on)
Vgs Voltage ( V )
20
Figure 4. Capacitance Characteristics
10
8
15
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
6
4
2
1.2
1.0
0.8
0
0
1
2
3
4
0.6
5
-50
Qg, Gate Charge (nC)
-25
0
25
50
75
100
125
150
TJ Juncation Temperature (ºC)
Figure 5. Gate Charge Characteristics
Figure 6. On-Resistance Variation with Temperature
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AO7400/ MC7400
Typical Electrical Characteristics (N-Channel)
0.1
ID = 5.3A
VGS = 0V
10
0.08
RDS(ON), ON-RESISTANCE(OHM)
IS, REVERSE DRAIN CURRENT (A)
100
o
1
TA = 125 C
o
25 C
0.1
0.01
0.06
0.04
TA = 25oC
0.02
0.001
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
2
1.4
4
6
8
10
V GS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. On-Resistance with Gate to Source Voltage
50
VDS = VGS
ID = 250mA
2
P(pk), PEAK TRANSIENT POWER (W)
-Vth, GATE-SOURCE THRESTHOLD
VOLTAGE (V)
2.2
1.8
1.6
1.4
1.2
1
-50
-25
0
25
50
75
100
125
150
175
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
40
30
20
10
0
0.001
0.01
0.1
1
t1, TIME (SEC)
10
100
o
TA, AMBIENT TEMPERATURE ( C)
Figure 9. Vth Gate to Source Voltage Vs Temperature
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
D = 0.5
0.2
0.1
0.1
Rq J A (t) = r(t) + Rq J A
Rq J A = 1 2 5 o C/W
0.0
P(p k)
0.02
0.01
t1
t2
0.01
TJ - TA = P * Rq J A(t )
Duty Cycle, D = t1 / t2
S INGLE P ULS E
0.001
0.0001
0.001
0.01
0.1
t1, TIM E (s e c )
1
10
100
1000
Figure 11. Transient Thermal Response Curve
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