Freescale AOD442 / MCD442 N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 38 @ VGS = 10V 60 50 @ VGS = 4.5V ID (A) 30 26 Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DPAK saves board space Fast switching speed High performance trench technology o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol Limit Units Parameter VDS 60 Drain-Source Voltage V VGS ±20 Gate-Source Voltage a o TC=25 C ID Continuous Drain Current b Pulsed Drain Current a Continuous Source Current (Diode Conduction) a IDM 40 IS 30 o TC=25 C P D Power Dissipation THERMAL RESISTANCE RATINGS Parameter Symbol a A A W 50 o TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Maximum Junction-to-Case 19 RθJA RθJC Maximum C Units 50 o 3.0 o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 www.freescale.net.cn Freescale AOD442 / MCD442 o SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = 250 uA Limits Unit Min Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A Diode Forward Voltage Dynamic A A ±100 VDS = 48 V, VGS = 0 V 1 25 VDS = 48 V, VGS = 0 V, T J = 55oC ID(on) Drain-Source On-Resistance Forward Tranconductance IDSS 1.0 VDS = 0 V, VGS = 20 V VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 4.5 V, ID = 26 A rDS(on) g fs VSD VDS = 15 V, ID = 30 A IS = 24 A, VGS = 0 V 34 V nA uA A 38 50 22 1.1 mΩ S V b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Qg Qgs Qgd td(on) tr td(off) tf VDS = 15 V, VGS = 4.5 V, ID = 30 A VDD = 25 V, RL = 25 Ω , ID = 30 A, VGEN = 10 V 12.5 2.4 2.6 11 8 19 6 nC nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. FREESCALE reserves the right to make changes without fu rther notice to any products herein. FREESCALE makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assumeany liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale product could create a situ ation where personal injury or death may occur. Should Buyer purchase or use freescale products for any s uch unintended or unauthorized application, Buyer s hall indemnify and hold freescale and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale was negligent regarding the design or manufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer. 2 www.freescale.net.cn Freescale AOD442 / MCD442 Typical Electrical Characteristics 30 30 25oC 20 ID - Drain Current (A) 25 4.5V 15 10 5 125oC 20 15 10 5 0 0 0 1 2 3 4 2 5 3 4 5 6 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.2 C - Capacitance (pF) r DS(ON) - Normailized On-Resistance 2000 2 1.8 1.6 4.5V 1.4 1.2 10V 1600 1200 Ciss Coss 800 Crss 400 1 0 0.8 0 6 12 18 24 0 30 6 ID - Drain Current (A) 12 18 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance rDS(ON) , - On-Resistance (Normalized) 10 8 Vgs Voltage ( V ) ID - Drain Current (A) TA =-55 oC VGS = 10V 25 6 4 2 2.6 VGS = 10V 2.2 1.8 1.4 1 0.6 0.2 0 -50 0 4 8 12 16 20 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Qg, Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 3 www.freescale.net.cn 175 Freescale AOD442 / MCD442 Typical Electrical Characteristics (N-Channel) 0.12 rDS(ON) - On-Resistance (OHM) 100 TA = 125oC 1 25oC 0.1 0.01 0.001 0.1 0.08 0.06 0.04 0.02 0.0001 0 0.2 0.4 0.6 0.8 1 2 1.2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs.Gate-to Source Voltage 50 40 3 ID = 250µA 30 2.6 2.2 20 1.8 10 1.4 -50 -25 0 25 50 75 100 125 150 0 0.001 175 0.01 TJ - Temperature (oC) 0.1 1 10 100 1000 T i me ( sec) Threshold Voltage Single Pulse Power 1 D = 0.5 RθJA(t) = r(t) + R θJA Normalized Effective Transient Thermal Impedance VGS(th), Variance (V) IS - Source CURRENT (A 10 R θJA = 125 oC/W 0.2 0.1 0.1 P(pk) TJ - TA = P * R θJA(t) Duty Cycle, D = t1 / t2 t1 0.05 0.02 0.01 t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 4 www.freescale.net.cn Freescale AOD442 / MCD442 Package Information 5 www.freescale.net.cn