SHENZHENFREESCALE MC4840

Freescale
AO48 40/ MC48 40
Dual N-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
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PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
22 @ VGS = 10V
40
27 @ VGS = 4.5V
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Fast switching speed
High performance trench technology
ID (A)
8.3
7.3
1
8
2
7
3
6
4
5
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Units
VDS
40
Drain-Source Voltage
V
VGS
±20
Gate-Source Voltage
o
TA=25 C
a
Continuous Drain Current
Pulsed Drain Current
o
8.3
ID
TA=70 C
b
Continuous Source Current (Diode Conduction)
a
IDM
±50
IS
2.3
o
TA=25 C
a
Power Dissipation
o
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
a
t <= 10 sec
Steady-State
RθJA
W
1.3
TJ, Tstg
Symbol
A
2.1
PD
TA=70 C
THERMAL RESISTANCE RATINGS
Parameter
A
6.8
o
-55 to 150
Maximum
C
Units
62.5
o
110
o
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
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AO48 40/ MC48 40
o
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Paramete r
Symbol
Test Conditions
V(BR)DSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 uA
VDS = VGS, ID = 250 uA
Limits
Unit
Min Typ Max
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
ID(on)
Drain-Source On-Resistance
Forward Tranconductance
IDSS
A
A
rDS(on)
Diode Forward Voltage
g fs
VSD
Pulsed Source Current (Body Diode)A
ISM
Dynamic
30
1
V
VDS = 0 V, VGS = 20 V
±100
nA
VDS = 32 V, VGS = 0 V
1
25
uA
VDS = 32 V, VGS = 0 V, T J = 55oC
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 8.3 A
VGS = 4.5 V, ID = 7.3 A
VDS = 15 V, ID = 8.3 A
IS = 2.3 A, VGS = 0 V
20
A
22
27
mΩ
40
0.7
S
V
A
5
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS = 15 V, VGS = 5 V,
ID = 8.3 A
N-Channel
VDS=20V, VGS=0V, f=1MHz
20
7
7
nC
1317
pF
272
169
VDD = 25 V, RL = 25 Ω , ID = 1 A,
VGEN = 10 V
20
9
70
20
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
FREESCALE reserves the right to make changes without fu rther notice to any products herein. FREESCALE makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assumeany liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the freescale product could create a situ ation where personal injury or death may occur.
Should Buyer purchase or use freescale products for any s uch unintended or unauthorized application, Buyer s hall indemnify and hold freescale and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that freescale was negligent regarding the design or manufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer.
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Freescale
AO48 40/ MC48 40
Typical Electrical Characteristics
40
120
10V
VD= 5V
6V
35
4.5V
ID Drain Current (A)
IDSDrain Current (A)
100
80
60
30
25
20
15
40
10
20
5
0
0
0
0.5
1
1.5
2
2.5
3
1
0
VDS(V)
2
3
4
5
6
VGS Gate to Source Voltage (V)
Output Characteristics
Transfer Characteristics
2
0.06
Capacitance (nF)
Ω) (
RDS(ON) resistance
1.8
0.05
0.04
4.5V
0.03
6V
0.02
10V
0.01
1.6
Ciss
1.4
1.2
1
0.8
0.6
Coss
0.4
0
Crss
0.2
0
10 20 30 40 50 60 70 80 90 10
0
0
0
5
10
ID Drain Current (A)
8
VGS(V)
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24
Capacitance
rDS(ON), - On-Resistance
Normalized
VD = 15V
ID = 10A
20
VDS (V)
On-Resistance vs. Drain Current
10
15
QG, Total Gate Charge (nC)
2
I D = 3.6A
VGS = 10V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
T
Gate Charge
J
25
50
75
100
- Junc t i on T e mpe r a t ur e (
o
125
150
C)
On-Resistance vs. Junction Temperature
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Freescale
AO48 40/ MC48 40
Typical Electrical Characteristics
0.03
Id=10A
0.025
Ω) (
RDS(ON) Resistance
IS - Source Current
(A)
100
10
T A= 125o C
1
0.1
0.01
25o C
0.001
0.02
0.015
0.01
0.005
0.0001
0
0
0.2
V
SD
0.4
0.6
0.8
1
1.2
0
- Sour c e - t o- D r a i n V OLT AGE ( V )
4
6
10
On-Resistance vs. Gate-to-Source Voltage
50
2.2
2
8
VGS Gate to Source Voltage(V)
Source-Drain Diode Forward Voltage
SINGLE PULSE
RqJA = 125oC/W
TA = 25oC
40
ID = -250mA
1.8
Power (W)
30
1.6
1.4
20
10
1.2
0
0.001
1
-50
-25
0
25
50
75
100
125
150
175
0.01
0.1
1
10
100
Time (sec)
o
TJ - Temperature ( C)
Threshold Voltage
Thermal Impedance
1
Normalized Effective Transient
VGS(th)Variance (V)
2
0.1
Single Pulse Power
D = 0.5
0.2
R q J A (t ) = r(t ) + R q J A
0.1
R q J A = 12 5o C /W
0.0
P(p k
)
0.02
t1
0.01
T J - T A = P t*2R q J A( t )
Dut y C ycle, D = t 1 /
t2
0.01
S INGLE P ULS E
0.001
0.0001
0.001
0.01
0.1
1
Square Wave P uls e Duratio n (s ec)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Freescale
AO48 40/ MC48 40
Package Information
SO-8: 8LEAD
H x 45°
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