BYG22A THRU BYG22D 50V-200V Super Fast Silicon Mesa SMD Rectifier 2.0A FEATURES D D D D D D D D Controlled avalanche characteristic Glass passivated junction Low reverse current Low forward voltage Soft recovery characteristic Very fast reverse recovery time Good switching characteristics Wave and reflow solderable MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Parameter Reverse voltage g =Repetitive peak reverse voltage Peak forward surge current Average forward current Junction and storage temperature range Pulse energy in avalanche mode, non repetitive (inductive load switch off) Test Conditions Type BYG22A BYG22B BYG22D tp=10ms, half sinewave I(BR)R=1A, Tj=25°C Symbol VR=VRRM VR=VRRM VR=VRRM IFSM Value 50 100 200 35 Unit V V V A IFAV Tj=Tstg 2 –55...+150 A °C ER 20 mJ Maximum Thermal Resistance Parameter Test Conditions Junction lead TL=const. Junction ambient mounted on epoxy–glass hard tissue mounted on epoxy–glass hard tissue, 50mm2 35mm Cu mounted on Al–oxid–ceramic (Al2O3), 50mm2 35mm Cu Symbol RthJL RthJA RthJA RthJA Value 25 150 125 100 Unit K/W K/W K/W K/W Electrical Characteristics Parameter Forward voltage g Reverse current Reverse recovery time Test Conditions IF=1A IF=2A VR=VRRM VR=VRRM, Tj=100°C IF=0.5A, IR=1A, iR=0.25A E-mail: [email protected] 1 of 2 Type Symbol VF VF IR IR trr Min Typ Max 1 1.1 1 10 25 Unit V V mA mA ns Web Site: www.taychipst.com BYG22A THRU BYG22D 50V-200V Super Fast Silicon Mesa SMD Rectifier RATINGS AND CHARACTERISTIC CURVES BYG22A THRU BYG22D 100 IF – Forward Current ( A ) 100 I R – Reverse Current ( mA ) 2.0A 10 1 VR = VR RM 0.1 0.01 10 Tj = 125°C 75°C 1 25°C 0.1 0.01 0 40 80 120 200 160 0 Tj – Junction Temperature ( °C ) 94 9347 0.6 1.8 3.0 2.4 VF – Forward Voltage ( V ) 94 9352 Figure 1. Typ. Reverse Current vs. Junction Temperature 1.2 Figure 3. Max. Forward Current vs. Forward Voltage I FAV– Average Forward Current ( A ) 140 t rr – Reverse Recovery Time ( ns ) 2.0 1.6 RthJA=25K/W 1.2 100K/W 0.8 125K/W 0.4 Tamb= 125°C 120 75°C 80 50°C 60 40 25°C 20 150K/W 0 IR=0.5A, iR=0.125A 0 0 40 80 120 200 160 0 Tamb – Ambient Temperature ( °C ) 94 9351 0.2 0.4 0.6 1.0 0.8 IF – Forward Current ( A ) 94 9353 Figure 2. Max. Average Forward Current vs. Ambient Temperature Z thp – Thermal Resistance for Pulse Cond. (K/W) 100°C 100 Figure 4. Max. Reverse Recovery Time vs. Forward Current 1000 125K/W DC 100 tp/T=0.5 tp/T=0.2 10 tp/T=0.1 tp/T=0.05 tp/T=0.02 Single Pulse tp/T=0.01 1 10–5 10–4 94 9339 10–3 10–2 10–1 100 101 102 tp – Pulse Length ( s ) Figure 6. Thermal Response E-mail: [email protected] 2 of 2 Web Site: www.taychipst.com